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Articles by author: Kikuo Yamabe

• A Long-Term Reliability of Thermal Oxides Grown on n-Type 4H-SiC Wafer
  Published in: Silicon Carbide and Related Materials 2003 (p1269)
• Electron-Beam-Induced Current Study of Breakdown Behavior of High-K Gate MOSFETs
  Published in: Gettering and Defect Engineering in Semiconductor Technology XIII (p461)
• Generation and Growth of Atomic-Scale Roughness at Surface and Interface of Silicon Dioxide Thermally Grown on Atomically Flat Si Surface
  Published in: Technology Evolution for Silicon Nano-Electronics (p110)
• Gettering of Iron Using Electrically Inactive Boron Doped Layer
  Published in: Defects in Semiconductors 18 (p1991)
• Local Dielectric Degradation of Cu-Contaminated SiO₂ Thin Films
  Published in: Gettering and Defect Engineering in Semiconductor Technology X (p641)
• Observation of Leakage Sites in High-k Gate Dielectrics in MOSFET Devices by Electron-Beam-Induced Current Technique
  Published in: Gettering and Defect Engineering in Semiconductor Technology XII (p449)
• Sintering of Alumina/Zirconia Composite Powders Prepared by the Coprecipitation Technique
  Published in: The Science of Engineering Ceramics II (p303)
• Two-Dimensional Roughness Growth at Surface and Interface of SiO₂ Films during Thermal Oxidation of 4H-SiC(0001)
  Published in: Silicon Carbide and Related Materials 2011 (p785)
• Vacancy-Type Defects in SrTiO₃ Probed by a Monoenergetic Positron Beam
  Published in: Positron Annihilation - ICPA-13 (p201)