Papers by Author: Kimito Nishikawa

Abstract: 4H-SiC layers have been homoepitaxially grown on 4°off-axis (0001) and (000-1) under various conditions by horizontal hot-wall CVD. We have investigated surface morphology and background doping concentration of the epi-layers on 4°off-axis substrates. Surface morphology grown on the (0001) Si-face showed strong step bunching under C-rich conditions. On the other hand, smooth surface morphology on the (000-1) C-face could be grown in the wide C/Si ratio range at 1600 °C. Site-competition behavior is clearly observed under low-pressure growth conditions on 4°off-axis (000-1) C-face, leading to a lowest doping concentration of 4.4x1014 cm-3.

Abstract: 4H-SiC layers have been homoepitaxially grown on off-axis 4H-SiC(000-1) under various conditions by horizontal hot-wall CVD. Improvement of surface morphology and reduction of background doping concentration have been achieved. Surface morphology grown on the (000-1) C face strongly depends on the C/Si ratio at 1500 °C, and hillock-like surface defects can be eliminate by increasing growth temperature to 1600 °C. Site-competition behavior is clearly observed under low-pressure growth conditions even on the (000-1) C face. The lowest doping concentration has been determined to be 6.0x1014 cm-3. A trial of high-speed growth on the (000-1) C face and deep level analysis are also discussed.