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Articles by author: Kuniaki Yagi

• ‘Switch-Back Epitaxy’ as a Novel Technique for Reducing Stacking Faults in 3C-SiC
  Published in: Silicon Carbide and Related Materials 2005 (p291)
• Challenges for Improving the Crystal Quality of 3C-SiC Verified with MOSFET Performance
  Published in: Silicon Carbide and Related Materials 2007 (p89)
• Correlation between Leakage Current and Stacking Fault Density of p-n Diodes Fabricated on 3C-SiC
  Published in: Silicon Carbide and Related Materials 2009 (p339)
• Crystallinity of 3C-SiC Films Grown on Si Substrates
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p191)
• Dynamics of Discommensuration in Commensurate-Incommensurate Phase Transition of Dielectrics and Alloys
  Published in: Electron Microscopy Applications to Materials Science (p115)
• Heteroepitaxial Growth and Characteristics of 3C-SiC on Large-Diameter Si(001) Substrates
  Published in: Silicon Carbide and Related Materials 2001 (p319)
• High Quality 3C-SiC Substrate for MOSFET Fabrication
  Published in: HeteroSiC & WASMPE 2011 (p91)
• Iron-Related Defect Centers in 3C-SiC
  Published in: Silicon Carbide and Related Materials 2010 (p265)
• Propagation of Stacking Faults in 3C-SiC
  Published in: Silicon Carbide and Related Materials 2010 (p282)
• Properties of Free-Standing 3C-SiC Monocrystals Grown on Undulant-Si(001) Substrate
  Published in: Silicon Carbide and Related Materials - 2002 (p3)
• Raman Determination of Stresses and Strains in 3C-SiC Films Grown on 6-Inch Si Substrates
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p669)
• Recent Results of Long-Term Creep Rupture Test
  Published in: Creep and Fracture of Engineering Materials and Structures (p17)
• Stacking Faults in 3C-SiC Relax Lattice Deformation
  Published in: Silicon Carbide and Related Materials - 2002 (p273)
• Temperature-Dependence of the Leakage Current of 3C-SiC p⁺-n Diodes Caused by Extended Defects
  Published in: Silicon Carbide and Related Materials 2009 (p343)
• Thermally-Assisted Tunneling Model for 3C-SiC p⁺-n Diodes
  Published in: Silicon Carbide and Related Materials 2010 (p571)