Authors: Li Gang Zhao, Dun Wen Zuo, Yu Li Sun, Min Wang
Abstract: The experimental research on silicon was reported in this paper. The surface roughness under the different workpiece feed speed and linear velocity of the wire saws is studied mainly in this experiment. The effects of the workpiece feed Vs and the linear velocity of the wire saws Vw were analyzed.
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Authors: Li Gang Zhao, Dun Wen Zuo, Yu Li Sun, Min Wang
Abstract: . In this paper, the model of fixed abrasive diamond wire saw has been set up, and its cutting mechanism has been discussed. Then, the material removal rate model and wire saw cutting efficiency model have been established. the speed of wire saw, the number of the dynamic effective abrasive and the workpiece feed rate have been analyzed to study their impaction on the stability of cutting process. Finally, some rules and suggestions were brought forward.
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Authors: Yu Li Sun, Dun Wen Zuo, Yong Wei Zhu, Ming Wang, H.Y. Wang, Li Gang Zhao
Abstract: The friction behavior of single silicon wafer sliding against different ice counterparts
(α-Al2O3, CeO2 and SiO2) at 10±0.5 °C within a velocity of 60 rpm~300 rpm were studied using a
home-made friction and wear testing machine. The morphologies and surfaces roughness of the worn
silicon wafers were observed and examined on a non-contact surface topography instrument (ADE). It
was found that the friction coefficient of the single silicon wafer decreased with the increase of sliding
velocity. Single crystal silicon wafer coupled with α-Al2O3 ice counterpart recorded the highest
friction coefficient and the biggest surface roughness, while it had the lowest friction coefficient and
the smallest surface roughness as with CeO2 ice counterpart. One reason was that a series of
tribochemical reactions occurred at the local contact point between the ice counterpart and the silicon
wafer during sliding. Under alkaline condition, there would be a soft corrosion layer formed on the
surface of the silicon wafer. Another reason was that the hardness of the abrasive particles was
different and this caused different cutting depth of them.
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Authors: Li Gang Zhao, Dun Wen Zuo, Yu Li Sun
Abstract: This paper introduces and summarizes the slicing technology of large-scare silicon
wafers. And the research status of ID slicing, wire saw slicing and WEDM is summed up. Finally,
this document indicates the direction of research and the development.
1
Authors: Rong Fa Chen, Dun Wen Zuo, Duo Sheng Li, Bing Kun Xiang, Li Gang Zhao, Min Wang
Abstract: High quality diamond film wafers with different thickness are prepared by high power
DC arc plasma jet CVD (DCPJ CVD) method using a CH4/Ar/H2 gas mixture. The effects of
methane concentration on the growth of carbon balls in anode nozzle and arc stability are studied
with theoretical analysis and experimental investigation. The results indicate that different sizes of
carbon balls may rapidly grow in the anode nozzle with methane concentration higher than 2
Vol-%, symmetry and uniformity of the rotating arc are strongly affected with the occurrence of
carbon balls, which will result in non-uniform deposition of diamond films over a large substrate
area. The methane concentration should be controlled at a low level to keep diamond film wafers
growth stable. Characterization by X-ray diffraction, Raman spectroscopy and SEM analysis are
also carried out.
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Authors: Duo Sheng Li, Dun Wen Zuo, Rong Fa Chen, Bing Kun Xiang, Li Gang Zhao
Abstract: DC-Plasma arc behavior is one of the key factors on growth of diamond film. The results
show that keeping steady DC-Plasma arc can grow better quality diamond film. In a long-time
growth of diamond film, there is sediment carbon on about 5mm border-entad anode annulus, which
was proved to be graphite. It results in fluctuating and instability of DC-Plasma arc and in the
DC-Plasma density, which causes graphite generation and much stress in the film. By means of
adjusting anode annulus assembly, pausing the supply of carbon source and increasing H2, the
problem of sediment carbon cab be effectively resolved. Finally, the mechanism of the effect of arc
behavior on growth of diamond film is discussed.
385
Authors: Li Gang Zhao, Dun Wen Zuo, L. Fan, Rong Fa Chen, Duo Sheng Li, Min Wang
Abstract: This paper brings forward a new type of the tooth profile of noncircular gear—constant
pressure angle involute tooth profile, and realizes its wire-electrode cutting. By the design of CAD
and CAM, this paper shortens the design time of the noncircular gear and improved the design
accuracy of the noncircular gear. By the research of the constant pressure angle involute tooth
profile of noncircular gear, this paper has improved the transmission accuracy of the noncircular
gear. By the research of the technology of wire-electrode cutting, this paper has improved the
manufacturing accuracy of the noncircular gear.
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