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Articles by author: Lucia Calcagno

• Activation Study of Implanted N⁺ in 6H-SiC by Scanning Capacitance Microscopy
  Published in: Silicon Carbide and Related Materials - 2002 (p375)
• Compensation Effects in 7 MeV C Irradiated n-Doped 4H-SiC
  Published in: Silicon Carbide and Related Materials 2007 (p619)
• Correlation between Leakage Current and Ion-Irradiation Induced Defects in 4H-SiC Schottky Diodes
  Published in: Silicon Carbide and Related Materials 2005 (p1167)
• Defect Evolution in Ion Irradiated 6H-SiC Epitaxial Layers
  Published in: Silicon Carbide and Related Materials 2004 (p485)
• Defects in He⁺ Irradiated 6H-SiC Probed by DLTS and LTPL Measurements
  Published in: Silicon Carbide and Related Materials 2003 (p493)
• Defects in High Energy Ion Irradiated 4H-SiC
  Published in: Silicon Carbide and Related Materials 2008 (p397)
• Effects of Epitaxial Layer Growth Parameters on the Defect Density and on the Electrical Characteristics of Schottky Diodes
  Published in: Silicon Carbide and Related Materials 2004 (p429)
• Effects of Thermal Treatments on the Structural and Electrical Properties of Ni/Ti Bilayers Schottky Contacts on 6H-SiC
  Published in: Silicon Carbide and Related Materials 2003 (p865)
• Electrical Characterization of Nickel Silicide Contacts on Silicon Carbide
  Published in: Silicon Carbide and Related Materials 2001 (p893)
• Epitaxial Layers Grown with HCl Addition: A Comparison with the Standard Process
  Published in: Silicon Carbide and Related Materials 2005 (p163)
• Ion-Irradiation Effect on the Ni/SiC Interface Reaction
  Published in: Silicon Carbide and Related Materials 2000 (p255)
• New Achievements on CVD Based Methods for SiC Epitaxial Growth
  Published in: Silicon Carbide and Related Materials 2004 (p67)
• Optimisation of Epitaxial Layer Growth by Schottky Diodes Electrical Characterization
  Published in: Silicon Carbide and Related Materials 2005 (p199)
• Optimisation of Epitaxial Layer Growth with HCl Addition by Optical and Electrical Characterization
  Published in: Silicon Carbide and Related Materials 2006 (p137)
• Quantitative High-Resolution Two-Dimensional Profiling of SiC by Scanning Capacitance Microscopy
  Published in: Silicon Carbide and Related Materials 2001 (p655)