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CONFERENCE
6/16/2013 - 6/19/2013
The 7th International conference on Physical and Numerical Simulation of Materials Processing
5/16/2013 - 5/19/2013
2nd International Congress on Advanced Materials
4/13/2013 - 4/14/2013
2013 2nd lnternational Conference on lntclligent Materials, Applied Mechanics and Design Science (IMAMD 2013)
more...
Articles by author: Lyudmila I. Khirunenko
24 papers on 2 pages:
1
[2]
[next]
Boron-Oxygen-Related Defect in Silicon
Published in:
Gettering and Defect Engineering in Semiconductor Technology XIV
(p178)
Diffusion and Precipitation of Oxygen in Silicon Doped with Germanium
Published in:
Defects in Semiconductors 19
(p1767)
Diffusion and Precipitation of Oxygen in Silicon Doped with Germanium
Published in:
Gettering and Defect Engineering in Semiconductor Technology VII
(p183)
EPR and IR Absorption of Defects in Isotopically Enriched Germanium
Published in:
Defects in Semiconductors 18
(p167)
Influence Intrinsic Elastic Stresses on the Annealing Processes of Radiation Defects in Silicon
Published in:
Defects in Semiconductors I
(p293)
Influence of Intrinsic Elastic Stresses on the Interaction between Point Defects in Si
Published in:
Defects in Semiconductors 18
(p1385)
Interstitial Carbon Related Defects in Low-Temperature Irradiated Si: FTIR and DLTS Studies
Published in:
Gettering and Defect Engineering in Semiconductor Technology XI
(p261)
Interstitial Carbon-Related Defects in Si
1-x
Ge
x
Alloys
Published in:
Gettering and Defect Engineering in Semiconductor Technology XII
(p59)
Interstitial Oxygen in Nature and Monoisotopic Germanium
Published in:
Defects in Semiconductors I
(p305)
Interstitial-Related Radiation Defects in Silicon Doped with Tin and Germanium
Published in:
Gettering and Defect Engineering in Semiconductor Technology X
(p393)
IR Absorption in Monoisotopic Germanium
Published in:
Defects in Semiconductors 16
(p425)
Isotopic Shifts of the Rotational States of Interstitial Oxygen in Germanium
Published in:
Defects in Semiconductors 19
(p47)
Local Vibrations of Substitutional Carbon in SiGe Alloys
Published in:
Advanced Materials Forum III
(p364)
Luminescent and Structural Properties of Self-Implanted Silicon Layers in Relation to their Fabrication Conditions
Published in:
Gettering and Defect Engineering in Semiconductor Technology XIV
(p341)
Matrix-Induced Isotope Shift of a Vibrational Mode of Interstitial Oxygen in Germanium
Published in:
Defects in Semiconductors 19
(p41)
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