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Articles by author: M.I. Heggie

• First Principles Calculations of Hydrogen Aggregation in Silicon
  Published in: Defects and Diffusion in Semiconductors - An Annual Retrospective VII (p81)
• First Principles Modelling of Scroll-to-Nanotube Defect: Screw-Type Dislocation
  Published in: Silicon Carbide and Related Materials 2005 (p1583)
• Impurity Effects on the Dislocation Structure in GaAs
  Published in: Dislocations '93 (p501)
• Interaction of Phosphorus with Dislocation Cores in Silicon
  Published in: Shallow Impurities in Semiconductors IV (p265)
• Partial Dislocations under Forward Bias in SiC
  Published in: Silicon Carbide and Related Materials 2006 (p279)
• Peierls Barriers and Core Properties of Partial Dislocations in SiC
  Published in: Silicon Carbide and Related Materials 2005 (p359)
• Structural and Electrical Properties of Threading Dislocations in GaN
  Published in: Defects in Semiconductors 19 (p1203)
• Structure and Energy of the 90° Partial Dislocations in Wurtzite-GaN
  Published in: Silicon Carbide and Related Materials 2004 (p1057)
• Theory of Dislocations in GaAs
  Published in: Defects in Semiconductors 17 (p1605)
• Theory of Nitrogen and Platelets in Diamond
  Published in: Defects in Semiconductors 16 (p457)