HOME CONTACT My eBook

Username: Password:

> @scientific.net

Articles by author: Mariya G. Ganchenkova

• Formation of Vacancies and Divacancies in Plane-Stressed Silicon
  Published in: Gettering and Defect Engineering in Semiconductor Technology XI (p433)
• Mechanisms of Diffusion and Dissociation of E-Centers in Silicon
  Published in: Diffusion in Materials - DIMAT2004 (p1129)
• Microscopic Mechanisms of Cobalt Disilicide Nucleation in Silicon
  Published in: Gettering and Defect Engineering in Semiconductor Technology XI (p133)
• Point Defect Formation in Si and Si:Ge; Computational Analysis of Pressure Effects
  Published in: Diffusion, Segregation and Stresses in Materials (p29)
• Simulation of Diffusion Mechanisms in Ordered Structures
  Published in: Diffusion in Materials DIMAT2000 (p429)
• Simulation of the Defect Complex Migration and the Comparison of the Different Diffusion Mechanisms in the Ordered Structures
  Published in: Diffusion and Reactions (p215)
• The Effect of Compound Composition and Strain on Vacancies in Si/SiGe Heterostructures
  Published in: Gettering and Defect Engineering in Semiconductor Technology XI (p457)
• Theory of Diffusion under Pressure
  Published in: Diffusion in Materials DIMAT2000 (p49)