Papers by Author: Masaaki Ichiki

Abstract: High dielectric capacitors , that has around 1000 in dielectric constant, can be successfully formed by nanotransfer on non-heat-resisting substrates. PZT film could be released from the Si substrate and bonded onto the polymer one. The releasing characteristics have the relationships with the thickness of Pt layer. The formed PZT has perovskite structure and clear columnar texture.

Abstract: Photovoltaic lead lanthanum zirconate titanate films in a layered structure of different crystallographic orientations are fabricated by an optimized metalorganic deposition method. Such films of (001) orientation exhibit a photovoltaic electrical power of approximately 20 times higher than that of random films. The anisotropic optical properties of the oriented films, including dark conductivity, photoconductivity and photovoltaic tensor surfaces, are obtained quantitatively. These results show that the photovoltaic output current and power of the oriented films are highly improved to be equal to those of semiconductors and suitable for application in the optical sensor of micro-electro-mechanical systems.

Abstract: This paper reports on the formation of film structures and the highly improved photovoltaic output current of the lead lanthanum zirconate titanate (PLZT) employed. The photovoltaic effect of ferroelectrics has the advantage of its simple mechanisms of non-bias applications which are indispensable for semiconductor p-n junctions. But the output current of PLZT bulk is too low for use as a device current source. The PLZT film structure exhibited μA output current upon light illumination. The photovoltaic current of the PLZT film was more than 102 times than that of bulk PLZT. These differences are due to the characteristics of the design of the film including the configuration of the electrode. The PLZT film also has the advantage of easy output control and suitability for use on Si. Results show that the photovoltaic effect of the ferroelectric film is useful as the current source for micro-electro-mechanical systems (MEMS).

Abstract: Flat PZT cantilevers have been successfully fabricated from the Pt/Ti/PZT/Pt/Ti/SiO2/SOI multi-layered structure through MEMS technologies. A displacement of the tip of the cantilever driven at 6 V is measured to be 7.6 μm and the transverse piezoelectric constant calculated from the displacement is –103 pm/V. 1D optical scanners have been designed, simulated, fabricated and tested. The rotation angles of the mirror of the scanners were 60-70% of the simulated values.