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CONFERENCE
6/16/2013 - 6/19/2013
The 7th International conference on Physical and Numerical Simulation of Materials Processing
5/16/2013 - 5/19/2013
2nd International Congress on Advanced Materials
4/13/2013 - 4/14/2013
2013 2nd lnternational Conference on lntclligent Materials, Applied Mechanics and Design Science (IMAMD 2013)
more...
Articles by author: Mikhail G. Sosnin
13 papers on 1 page:
1
Boron-Oxygen-Related Defect in Silicon
Published in:
Gettering and Defect Engineering in Semiconductor Technology XIV
(p178)
Interstitial Carbon Related Defects in Low-Temperature Irradiated Si: FTIR and DLTS Studies
Published in:
Gettering and Defect Engineering in Semiconductor Technology XI
(p261)
Interstitial Carbon-Related Defects in Si
1-x
Ge
x
Alloys
Published in:
Gettering and Defect Engineering in Semiconductor Technology XII
(p59)
Interstitial-Related Radiation Defects in Silicon Doped with Tin and Germanium
Published in:
Gettering and Defect Engineering in Semiconductor Technology X
(p393)
Local Vibrations of Substitutional Carbon in SiGe Alloys
Published in:
Advanced Materials Forum III
(p364)
On the Properties of Divacancies in Si
1-x
Ge
x
Published in:
Gettering anf Defect Engineering in Semiconductor Technology IX
(p545)
Oxygen and Peculiarities of its Precipitation in Si
Published in:
Gettering and Defect Engineering in Semiconductor Technology VIII
(p215)
Oxygen Diffusion in Si
1-x
Ge
x
Alloys
Published in:
Gettering and Defect Engineering in Semiconductor Technology XIII
(p181)
Oxygen Precipitation in Silicon Doped with Tin
Published in:
Gettering anf Defect Engineering in Semiconductor Technology IX
(p111)
Peculiarities of Behavior of Irradiated Heat-Treated Si
Published in:
Defects in Semiconductors 15
(p165)
Peculiarities of Display of Multistable Defects in Relaxation Spectroscopy
Published in:
Defects in Semiconductors I
(p125)
Peculiarities of Formation and Annealing of VO-Related Defects in Ge Doped with Tin
Published in:
Gettering and Defect Engineering in Semiconductor Technology XIV
(p166)
Radiation Defects Formation in Si
Published in:
Gettering and Defect Engineering in Semiconductor Technology VIII
(p209)
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