HOME CONTACT My eBook

Username: Password:

> @scientific.net

Articles by author: Mitsutaka Nakamura

• Characterization of Schottky Diodes on 4H-SiC with Various Off-Axis Angles Grown by Sublimation Epitaxy
  Published in: Silicon Carbide and Related Materials 2007 (p967)
• Influence of Substrate Roughness on the Formation of Defects in 3C-SiC Grown on Si(110) Substrate by Hetero-Epitaxial CVD Method
  Published in: Silicon Carbide and Related Materials 2004 (p185)
• Investigation of Graphite Particle Inclusions in 6H-SiC Single Crystals Grown by Sublimation Boule Growth Technique
  Published in: Silicon Carbide and Related Materials 2003 (p47)
• Microstructures in the Pendeo Epitaxial Layer of 3C-SiC on Si Substrate
  Published in: Silicon Carbide and Related Materials 2004 (p221)
• Structural Analysis of (211) 3C-SiC on (211) Si Substrates Grown by Chemical Vapor Deposition
  Published in: Silicon Carbide and Related Materials 2003 (p285)
• Suppression Mechanism of Double Positioning Growth in 3C-SiC(111) Crystal by Using an Off-Axis Si(110) Substrate
  Published in: Silicon Carbide and Related Materials 2004 (p181)
• Suppression of the Twin Formation in CVD Growth of (111) 3C-SiC on (110) Si Substrate
  Published in: Silicon Carbide and Related Materials 2004 (p193)