Papers by Author: Nicolaas Stolwijk

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Fast Diffusion in Germanium and Silicon Investigated by Lamp-Based Rapid Thermal Annealing
Authors: Nicolaas Stolwijk, Ludmila Lerner, Axel Giese, Wilfried Lerch
Abstract: The study of fast diffusion processes in materials requires short isothermal annealing treatments combined with an accurate temperature measurement. The paper discusses the special demands on rapid thermal annealing (RTA) devices in diffusion research and how these can be met in practice. The scientific impact of RTA for diffusion research in semiconductors is demonstrated by several examples dealing with fast impurities in Ge and Si.
35
Iridium Diffusion into Silicon Wafers as a Means to Determine Silicon Vacancy Concentrations
Authors: Ludmila Lerner, Nicolaas Stolwijk
328
A Model for Diffusion and Ionic Conduction in Polymer Electrolytes
Authors: Nicolaas Stolwijk, S. Obeidi
1004
Observation of Vacancies during Zn Diffusion in GaP
Authors: Reinhard Krause-Rehberg, V. Bondarenko, J. Pöpping, Nicolaas Stolwijk, T.E.M. Staab, Ulf Södervall
26
Diffusion and Solubility of Iridium in Silicon
Authors: S. Obeidi, Nicolaas Stolwijk
635
Defect Formation During Zinc Diffusion in GaP
Authors: C. Jäger, Wolfgang Jäger, J. Pöpping, Nicolaas Stolwijk, Ulf Södervall
731
Measurements and Modeling of Zinc Diffusion Profiles in Gallium Phosphide
Authors: J. Pöpping, Nicolaas Stolwijk, G. Bösker, C. Jäger, Wolfgang Jäger, Ulf Södervall
723
Hybrid Impurity and Self-Diffusion in GaAs and Related Compounds: Recent Progress
Authors: Nicolaas Stolwijk, G. Bösker, J. Pöpping
687
Modeling of Boron Diffusion in Silicon Carbide
Authors: Hartmut Bracht, Nicolaas Stolwijk, Michael Laube, Gerhard Pensl
327
Segregation-Controlled Gold Diffusion in Polycrystalline Silicon
Authors: C. Poisson, Nicolaas Stolwijk, Jean Bernardini
1457
Showing 1 to 10 of 30 Paper Titles