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Papers by Author: Nils Nordell

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Dissociation Energy of the Passivating Hydrogen-Aluminum Complex in 4H-SiC

Authors: Martin S. Janson, Anders Hallén, Margareta K. Linnarsson, Nils Nordell, S. Karlsson, Bengt Gunnar Svensson

427

Al/Si Ohmic Contacts to p-Type 4H-SiC for Power Devices

Authors: Liliana Kassamakova, Roumen Kakanakov, Ivan Kassamakov, Nils Nordell, Susan Savage, Erik B. Svedberg, Lynnette D. Madsen

1009

Epitaxial Growth of β-SiC on Ion-Beam Synthesized β-SiC: Structural Characterization

Authors: A. Romano-Rodríguez, A. Pérez-Rodríguez, C. Serre, J.R. Morante, Jaume Esteve, M.C. Acero, Reinhard Kögler, Wolfgang Skorupa, Mikael Östling, Nils Nordell, S. Karlsson, J. Van Landuyt

309

Ground States of the Ionized Isoelectronic Ti Acceptor in SiC

Authors: T. Dalibor, Gerhard Pensl, Nils Nordell, Adolf Schöner, Wolfgang J. Choyke

537

SiC Surface Engineering for High Voltage JFET Applications

Authors: Pavel A. Ivanov, O.I. Kon'kov, Andrey O. Konstantinov, V.N. Panteleev, Tat'yana P. Samsonova, Nils Nordell, S. Karlsson, Chris I. Harris

1081

Comparison of SiO₂ and AIN as Gate Dielectric for SiC MOS Structures

Authors: Carl Mikael Zetterling, Mikael Östling, Chris I. Harris, Nils Nordell, K. Wongchotigul, Michael G. Spencer

877

Thermostable Ohmic Contacts on p-Type SiC

Authors: Liliana Kassamakova, Roumen Kakanakov, Nils Nordell, Susan Savage

787

Deuterium Incorpoation in Acceptor Doped Epitaxial Layers of 6H-SiC

Authors: Margareta K. Linnarsson, Martin S. Janson, Adolf Schöner, Nils Nordell, S. Karlsson, Bengt Gunnar Svensson

761

6H-SiC Crystallinity Behaviour upon B Implantation Studied by Raman Scattering

Authors: T. Paskova, E. Valcheva, Ivan G. Ivanov, Rositza Yakimova, Susan Savage, Nils Nordell, Chris I. Harris

741

Electrical Activation of B Implant in 6H-SiC

Authors: E. Valcheva, T. Paskova, I.S. Ivanov, Rositza Yakimova, Qamar-ul Wahab, Susan Savage, Nils Nordell, Chris I. Harris

705