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Articles by author: Nils Nordell

• 6H-SiC Crystallinity Behaviour upon B Implantation Studied by Raman Scattering
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p741)
• AFM Study of In Situ Etching of 4H and 6H SiC Substrates
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p363)
• Al/Si Ohmic Contacts to p-Type 4H-SiC for Power Devices
  Published in: Silicon Carbide and Related Materials - 1999 (p1009)
• Comparison of SiO₂ and AIN as Gate Dielectric for SiC MOS Structures
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p877)
• Deuterium Incorpoation in Acceptor Doped Epitaxial Layers of 6H-SiC
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p761)
• Dissociation Energy of the Passivating Hydrogen-Aluminum Complex in 4H-SiC
  Published in: Silicon Carbide and Related Materials 2000 (p427)
• Electrical Activation of B Implant in 6H-SiC
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p705)
• Epitaxial Growth of β-SiC on Ion-Beam Synthesized β-SiC: Structural Characterization
  Published in: Silicon Carbide and Related Materials - 1999 (p309)
• Ground States of the Ionized Isoelectronic Ti Acceptor in SiC
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p537)
• Growth of 4H and 6H SiC Trenches and Around Stripe Mesas
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p131)
• Incorporation of the D-Center in SiC Controlled either by Coimplantation of Si/B and C/B or by Site-Competition Epitaxy
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p681)
• Ionization Rates and Critical Fields in 4H SiC Junction Devices
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p513)
• SiC Surface Engineering for High Voltage JFET Applications
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p1081)
• Thermostable Ohmic Contacts on p-Type SiC
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p787)
• Transmission Electron Microscopy Investigation of Defects in B-Implanted 6H-SiC
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p413)