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Papers by Author: Patrice Vicente

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Growth at High Rates and Characterization of Bulk 3C-SiC Material

Authors: Gabriel Ferro, Carole Balloud, Sandrine Juillaguet, Patrice Vicente, Jean Camassel, Yves Monteil

115

Atomic-Step Observations on 6H- and 15R-SiC Polished Surfaces

Authors: Patrice Vicente, Etienne Pernot, Didier Chaussende, Jean Camassel

729

Vacancy Defects in As-Polished and in High-Fluence H⁺-Implanted 6H-SiC Detected by Slow Positron Annihilation Spectroscopy

Authors: Marie France Barthe, P. Desgardin, L. Henry, C. Corbel, D.T. Britton, Gottfried Kögel, Peter Sperr, Werner Triftshäuser, Patrice Vicente, L. diCioccio

493

Full Si Wafer Conversion into Bulk 3C-SiC

Authors: André Leycuras, Olivier Tottereau, Patrice Vicente, L.A. Falkovsky, P. Girard, Jean Camassel

147

Optical Characterization of SiC Materials: Bulk and Implanted Layers

Authors: Jean Camassel, Patrice Vicente, L. Falkovski

335

Growth of 3C-SiC on Si by Low Temperature CVD

Authors: T. Cloitre, N. Moreaud, Patrice Vicente, M.L. Sadowski, R.L. Aulombard

159

Characterization of 3C-SiC/SOI Deposited with HMDS

Authors: N. Planes, P. Dupel, M. Ravetz, Sylvie Contreras, Patrice Vicente, Thierry Chassagne, B. Fraisse, Jean Camassel, Yves Monteil, S. Rushworth

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