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Articles by author: Patrick R. Briddon

• A First Principles Study of Interstitial Si in Diamond
  Published in: Defects in Semiconductors 19 (p781)
• A Theoretical Study of Copper Contaminated Dislocations in Silicon
  Published in: Gettering and Defect Engineering in Semiconductor Technology XII (p259)
• Ab Initio Studies of Local Vibrations of Small Self-Interstitials Aggregates in Silicon
  Published in: Gettering and Defect Engineering in Semiconductor Technology XI (p175)
• An Ab Initio Study of Intrinsic Stacking Faults in GaN
  Published in: Silicon Carbide and Related Materials 2003 (p1617)
• Anomalous Shift of the 1075 cm^-1 Oxygen-Hydrogen Defect in Silicon
  Published in: Defects in Semiconductors 19 (p277)
• Breakdown of the Vacancy Model for Impurity-Vacancy Defects in Diamond
  Published in: Defects in Semiconductors 19 (p775)
• Density Functional Based Modelling of 30° Partial Dislocations in SiC
  Published in: Silicon Carbide and Related Materials 2003 (p453)
• Density Functional Simulations of Physisorbed and Chemisorbed Single Graphene Layers on 4H-SiC (0001), (000-1) and 4H-SiC:H Surface
  Published in: Silicon Carbide and Related Materials 2009 (p619)
• Effective Mass of Electrons in Quantum-Well-Like Stacking-Fault Gap States in Silicon Carbide
  Published in: Silicon Carbide and Related Materials - 2002 (p519)
• Electronic Localization around Stacking Faults in Silicon Carbide
  Published in: Silicon Carbide and Related Materials 2001 (p529)
• Electronic Properties and Structure of a Complex Incorporating a Self-Interstitial and two Oxygen Atoms in Silicon
  Published in: Gettering and Defect Engineering in Semiconductor Technology XI (p273)
• Electronic Properties of Stacking Faults in 15R-SiC
  Published in: Silicon Carbide and Related Materials - 2002 (p531)
• Electronic Structure of Twin Boundaries in 3C-SiC, Si and Diamond
  Published in: Silicon Carbide and Related Materials - 2002 (p527)
• First Principles Calculations of Hydrogen Aggregation in Silicon
  Published in: Defects and Diffusion in Semiconductors - An Annual Retrospective VII (p81)
• Hydrogen-Impurity Complexes in GaAs
  Published in: Shallow Impurities in Semiconductors IV (p169)