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Articles by author: Paul G. Coleman

• A Study of Epithermal Positron Emission from Metallic Surfaces
  Published in: Positron Annihilation - ICPA-10 (p161)
• A Study of Organo-Metallic Interfaces Using DBAR
  Published in: Positron Annihilation - ICPA-12 (p457)
• An Electrostatic Beam System for Positron-Annihilation-Induced Auger Electron Spectroscopy
  Published in: Positron Annihilation - ICPA-10 (p189)
• Effect of Residual Damage on Carrier Transport Properties in a 4H-SiC Double Implanted Bipolar Junction Transistor
  Published in: Silicon Carbide and Related Materials 2000 (p567)
• Electrostatic-Transport Positron Beams: Recent Developments at UEA
  Published in: Positron Annihilation - ICPA-9 (p1867)
• Experimental Studies of Positron-Surface Branching Ratios
  Published in: Positrons at Metallic Surfaces (p179)
• Experiments on Positron Implantation
  Published in: Positron Annihilation - ICPA-9 (p213)
• Investigation of Ion-Impantation Induced Damage in 6H-SiC by RSB/C and PAS
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p729)
• Low and Intermediate Energy Positron Backscattering
  Published in: Positron Annihilation - ICPA-10 (p177)
• Nanocrystalline Si Studied by Beam-Based Positron Annihilation Spectroscopy
  Published in: Positron Annihilation - ICPA-13 (p66)
• Positron Annihilation Studies of Order-Disorder in Cd₃Mg
  Published in: Positron Annihilation - ICPA-11 (p554)
• Positron Atomic Physics and Instrumentation: a Summary
  Published in: Positron Annihilation - ICPA-13 (p527)
• Positron Depth Profiling
  Published in: Positron Annihilation - ICPA-12 (p420)
• Positron Implantation Studies of YBa₂Cu₃0_7-x
  Published in: Positron Annihilation - ICPA-10 (p133)
• Recent Advances in the Application of Slow Positron Beams to the Study of Ion Implantation Defects in Silicon
  Published in: Defects and Diffusion in Semiconductors (p41)