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Articles by author: Pierre Gibart

• Blue Emission in Mg Doped GaN Studied by Time Resolved Spectroscopy
  Published in: Defects in Semiconductors 19 (p1155)
• Blue-U.V. Homojunction GaN LEDs Fabricated by MOVPE
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p1425)
• Correlation between the Optically Detected Magnetic Resonance and the Photoconductivity of Photo-Ionized DX Centers in Sn-Doped Al_xGa_1-xAs
  Published in: Defects in Semiconductors 16 (p835)
• Degeneracy Factor and Pressure Dependence of Si-Induced Deep Impurity States in Al_xGa_1-xAs from Transport Experiments under Hydrostatic Pressure
  Published in: Defects in Semiconductors 15 (p857)
• DX Centers in Other III-V Alloys
  Published in: DX Centers (p123)
• Elaboration and n-Type Doping of GaAlAs Epitaxial Layers
  Published in: Physics of DX Centers in GaAs Alloys (p1)
• Exciton Dynamics of Thick GaN Epilayers Deposited by MOVPE on Al₂O₃
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p1279)
• From Relaxed to Highly Tensily Strained GaN Grown on 6H-SiC and Si(111): Optical Characterization
  Published in: Silicon Carbide and Related Materials 2000 (p795)
• High Quality GaN on Si(111) using (AlN/GaN)_x Superlattice and Maskless ELO
  Published in: Silicon Carbide and Related Materials - 1999 (p1487)
• Local Structure of the DX Center in AlGaAs: Results from Positron Spectroscopy
  Published in: Defects in Semiconductors 18 (p1073)
• Magneto-Optical Investigations of DX Centres in Al_xGa_1-xAs
  Published in: Shallow Impurities in Semiconductors IV (p443)
• Mössbauer Spectroscopy Studies of the DX Center
  Published in: Physics of DX Centers in GaAs Alloys (p163)
• Studies of the DX Center Using Hydrostatic Pressure
  Published in: Physics of DX Centers in GaAs Alloys (p121)
• The Sn- and Si-DK Centre Properties in Double Doped (Al,Ga)As
  Published in: Shallow Impurities in Semiconductors V (p441)