Papers by Author: Qing Zhong Li

Abstract: A kind of slurry which is applicable for fine atomizing CMP was made and the optimal results were obtained through orthogonal experiments by comparing fine atomizing CMP and traditional CMP. The research results show that the material removal rate of fine atomizing CMP is 52.23% of traditional CMP, and the dosage of the slurry used in fine atomizing CMP only accounts for 10 vol% compared to traditional CMP. The surface roughness after the fine atomizing CMP is 2.5nm which is better than that of the traditional CMP (3.0nm).

Abstract: In this paper, a kind of alkaline slurry was introduced, in which silica was used as the abrasive, H₂O₂ was used as the oxidize, glycine was used as the complexing agent, azimidobenzene was used as the surfactant, and borax was used as the pH regulator. The atomization polishing method was used, and the effects of the traditional polishing and atomization polishing were compared. After the atomization polishing, the surface roughness of copper was 7.61 nm and the material removal rate was 188 nm/min; After the traditional polishing, the surface roughness was 15.22 nm and the material removal rate was 236 nm/min. The dosage of polishing slurry used in the atomization polishing is dozens of times less than that in the traditional polishing.

Abstract: The method of chemical mechanical polishing (CMP) using slurry which was ultrasonic subtle atomized was researched, and the system of Ultrasonic Subtle Atomization—Chemical Mechanical Polishing was established. The effects of polish parameters on polishing were also investigated. The results show that the experimental system can fully realize the expected function of polishing, the use of slurry is about one-tenth of the amount of traditional CMP, material removal rate can reach 113.734nm/min and the surface roughness is similar to the surface roughness in the traditional way.