Articles by author: R.C. Newman
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A Metastable Precursor to the Di-Carbon Centre in Crystalline Silicon
Published in: Defects in Semiconductors 15 (p481) -
A Piezo-Spectroscopic Study of Oxygen-Vacancy Centers in Silicon
Published in: Defects in Semiconductors 17 (p969) -
An Investigation of the 78/203 meV Double Acceptor in GaAs Including the Effects of Hydrogen Passivation
Published in: Shallow Impurities in Semiconductors IV (p175) -
Carbon and Silicon Impurity Centers in GaAs
Published in: Shallow Impurities in Semiconductors V (p45) -
Carbon Delta-Doping In GaAs and AlAs
Published in: Defects in Semiconductors 18 (p409) -
De-Alloying and Stress-Corrosion Cracking of Copper Alloys in Cu(I) Solutions
Published in: Electrochemical Methods in Corrosion Research III (p169) -
Disorder and Structural Relaxation in Passive Films on Fe-Cr Alloys
Published in: Passivation of Metals and Semiconductors (p233) -
Effect of Oxygen Concentration on the Kinetics of Oxygen Loss and Thermal Donor Formation in Silicon at Temperatures between 350° C and 500° C
Published in: Gettering and Defect Engineering in Semiconductor Technology (p161) -
Electrochemical Kinetics in Localized Corrosion Cavities
Published in: Electrochemical Methods in Corrosion Research III (p247) -
Electronic and Vibrational Absorption of Interstitial Carbon in Silicon
Published in: Defects in Semiconductors 14 (p929) -
Enhanced Oxygen Diffusion in Silicon at Low Temperatures
Published in: Defects in Semiconductors 14 (p887) -
Ga Antisite Defects in Neutron Irradiated and Annealed GaAs?
Published in: Defects in Semiconductors 14 (p1081) -
Hydrogen Solubility and Defects in Silicon
Published in: Defects in Semiconductors 17 (p861) -
Incorporation of Silicon in (311)A and (111)A GaAs Grown by Molecular Beam Epitaxy
Published in: Defects in Semiconductors 17 (p259) -
Infrared and Raman Studies of Carbon Impurities in Highly Doped MBE AlAs:C
Published in: Defects in Semiconductors 17 (p247)