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Articles by author: R. Jones

• A First Principles Study of Interstitial Si in Diamond
  Published in: Defects in Semiconductors 19 (p781)
• A Theoretical Study of Copper Contaminated Dislocations in Silicon
  Published in: Gettering and Defect Engineering in Semiconductor Technology XII (p259)
• Ab Initio Calculations on Interstitial O Clusters in Si
  Published in: Shallow Impurities in Semiconductors IV (p287)
• Ab Initio Studies of Local Vibrations of Small Self-Interstitials Aggregates in Silicon
  Published in: Gettering and Defect Engineering in Semiconductor Technology XI (p175)
• Anomalous Shift of the 1075 cm^-1 Oxygen-Hydrogen Defect in Silicon
  Published in: Defects in Semiconductors 19 (p277)
• Breakdown of the Vacancy Model for Impurity-Vacancy Defects in Diamond
  Published in: Defects in Semiconductors 19 (p775)
• Density Functional Based Modelling of 30° Partial Dislocations in SiC
  Published in: Silicon Carbide and Related Materials 2003 (p453)
• Electronic Properties and Structure of a Complex Incorporating a Self-Interstitial and two Oxygen Atoms in Silicon
  Published in: Gettering and Defect Engineering in Semiconductor Technology XI (p273)
• First Principles Investigation of Vacancy Oxygen Defects in Si
  Published in: Defects in Semiconductors 18 (p1297)
• H Interacting with Intrinsic Defects in Si
  Published in: Defects in Semiconductors 18 (p933)
• Hydrogen-Impurity Complexes in GaAs
  Published in: Shallow Impurities in Semiconductors IV (p169)
• Impurity Effects on the Dislocation Structure in GaAs
  Published in: Dislocations '93 (p501)
• Interaction of Hydrogen with Impurities in Semiconductors
  Published in: Defects in Semiconductors 16 (p551)
• Interaction of Phosphorus with Dislocation Cores in Silicon
  Published in: Shallow Impurities in Semiconductors IV (p265)
• Interstitial Carbon-Hydrogen Defects in Silicon
  Published in: Defects in Semiconductors 19 (p265)