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Articles by author: Richard Rizk

• Characterization of SiC Thin Film Obtained by Magnetron Reactive Sputtering: IBA, IR and Raman Studies
  Published in: Silicon Carbide and Related Materials 2004 (p287)
• Copper and Nickel Precipitation in a Σ=25 Silicon Bicrystal
  Published in: Polycrystalline Semiconductors III (p145)
• Cubic Silicon Carbide Films Grown by Reactive Magnetron Sputtering at Relatively Low Temperature
  Published in: Polycrystalline Semiconductors V (p477)
• EBIC and DLTS of the Electrical Activity of Fe-Contaminated Silicon Bicrystals
  Published in: Intergranular and Interphase Boundaries in Materials (p617)
• Gettering Efficiencies of ∑=25, ∑=13 and ∑=9 Silicon Bicrystals
  Published in: Intergranular and Interphase Boundaries in Materials (p621)
• Growth Control and Properties of Si Nanograins Embedded in either Amorphous Silicon or SiO₂ Matrix
  Published in: Advances in Nanocrystallization (p177)
• Hydrogen Effusion from Monocrystalline B-Doped Silicon
  Published in: Defects in Semiconductors 16 (p45)
• Influence of the Annealing Temperature on the Precipitation of Nickel in a ∑=25 Silicon Bicrystal
  Published in: Intergranular and Interphase Boundaries in Materials (p669)
• Nanocrystalline Silicon Carbide: Structure, Properties and Application to SiC/Si Heterostructure Devices
  Published in: Polycrystalline Semiconductors VI (p397)
• Nature and Role of Various Si-Based Sensitizers for Er³⁺ Ions in Silicon-Rich Silicon Oxide Thin Films
  Published in: Advances in Innovative Materials and Applications (p81)
• On the Electrical Activity of Fe-Contaminated Silicon Bicrystals
  Published in: Polycrystalline Semiconductors IV (p75)
• Optical, Electrical and Structural Studies of Microcrystallized Sputtered Silicon
  Published in: Polycrystalline Semiconductors IV (p243)
• Photoluminescence Features of Si/SiO₂ Superlattices Produced by Reactive Magnetron Sputtering
  Published in: Polycrystalline Semiconductors VI (p249)
• Quasi-Epitaxial Growth of Silicon Layers by Hydrogen Reactive Magnetron Sputtering at Temperatures as Low as 200 °C
  Published in: Polycrystalline Semiconductors VI (p65)
• Structure Dependence of the Electrical Conductivity of Hydrogenated Nanocrystalline Silicon Films
  Published in: Polycrystalline Semiconductors V (p143)