Papers by Author: Rong Tu

Abstract: α-Al2O3 and α-Al2O3/TiN multilayer films were prepared on Ti(C,N)-based cermet substrate by laser chemical vapor deposition.α-Al2O3 and NaCl-type TiN films were prepared at Tdep = 1148 K. α-Al2O3/TiN multilayer film showed dense structure of cross section, and its surface morphology consisted of aggregated spherical grains. The adhesion of α-Al2O3/TiN multilayer film prepared on Ti(C,N)-based cermet was higher as compared with α-Al2O3 film directly prepared on the cermet.

Abstract: Al2O3-AlN composite film was first prepared by laser chemical vapor deposition (laser CVD) using aluminum acetylacetonate (Al(acac)3) and ammonia (NH3) as source materials. The effects of NH3 on the crystal phase, composition and microstructure were investigated. The crystal phase changed from α-Al2O3 to AlN gradually with increasing the mole ratio of NH3 to Ar. Al2O3-AlN composite film was obtained at NH3/Ar ratio ranged from 0.09 to 0.16 (Tdep = 862–887 K), and AlN granular grains were embedded in between α-Al2O3 polyhedral grains.

Abstract: The oxidation tests of the ZrB2-15vol.%SiC composite were carried out at 1673-1923 K under a low partial pressure of oxygen. Cross sections of the oxidized samples were studied using WDS. The reaction layer consists of ZrO2 and SiO2 at 1673 K. The SiO2 protective layer is formed on the surface. No apparent SiC depleted layer is observed. SiC depletion seems to occur at 1923 K and only the ZrO2 phase exists at the reaction layer. The passive oxidation occurs at 1673 K, whereas the active oxidation at 1923 K. The mass changes are quantitatively discussed by introducing a new emprical equation. The ZrB2-30 vol.%SiC composite is also discussed briefly.

Abstract: First of all, the as-cast microstructures of Mo-rich Mo-Si-B ternary alloys were investigated around the triple junction point of the primary Mo solid solution, Mo5SiB2 and Mo2B in this work, based on the liquidus projections of the Mo-Si-B system which have been reported in earlier studies. Subsequently, their microstructural evolution through heat treatment was investigated. Since Mo2B crystallizes out during solidification into a primary or secondary phase even though the alloy composition lies in the triangle of Mo-Mo5SiB2-Mo3Si in the Mo-Si-B equilibrium phase diagram, the as-cast microstructures include the non-equilibrated Mo2B in wide compositional ranges. However, Mo2B was completely decomposed during heat treatment at 1800 °C for 24 h and this contributed to the development of homogeneous, fine microstructures. On the other hand, since Mo2B was not decomposed perfectly during 24 h of 1600 °C heat treatment, as-cast microstructures largely remained. Therefore, it is realized that the heat treatment at 1800 °C is necessary to obtain well-developed microstructures of Mo-Si-B alloys.

Abstract: Functionally graded Ca-Ti-O/Ca-P-O films were prepared by MOCVD. The phases, composition and morphology of Ca-Ti-O and Ca-P-O films changed depending on the molar ratio of each precursors, total pressure (Ptot) and substrate temperature (Tsub). CaTiO3 films in a single phase were obtained at Tsub = 973 and 1073 K. CaTiO3 films prepared at 873 K had a dense and smooth surface, whereas that prepared at Tsub = 1073 K had complicated rough surface with a cauliflower-like texture. The graded texture of CaTiO3 films from columnar to fine grains was advantageous to good adherence for metal substrates. -TCP and HAp films in a single phase were obtained at Tsub = 973 and 1073 K. Both -TCP and HAp films had a dense and smooth surface. The maximum deposition rate of Ca-Ti-O and Ca-P-O films were 44 and 20 m/h, respectively, and several 10 times grater than that of sputtering method. Apatite formation rate strongly depended on the surface morphology of film. Apatite formed after 3 days on the CaTiO3 film, 14 days on the -TCP film and 6 hours on the HAp film in a Hanks’ solution.

Abstract: ZrB2-SiC composites were prepared by arc melting using ZrB2 and -SiC powders as raw materials and their oxidation behavior were investigated. The eutectic composition of the ZrB2-SiC system was ZrB2-58.5mol%SiC and the melting point temperature was about 2570 K. At 1673 K mass gain was observed in the oxidation of ZrB2-SiC eutectic composition and the mass gain rate increased with decreasing Ptot. The oxide scale consisted of an amorphous SiO2 layer, a ZrO2-SiO2 eutectic-like layer and a Si-deficient layer.

Abstract: AlN–SiC solid solutions with p-type electrical conduction were fabricated with the addition of small amounts of Al and C. Powder mixtures of AlN and SiC with small amounts of Al and C (below 10 mol%) were consolidated by spark plasma sintering (SPS) at 2000°C for 10 min under 1 atm Ar, and then heat-treated at 2200°C for 3 h in an Ar flow to afford 2H AlN–SiC solid solutions. The relative densities of the 50AlN-50SiC-Al4C3 (A50-1AC) and 50AlN-50SiC-3Al4C3 (A50-3AC) samples were about 95%, whereas that of the 75AlN-25SiC-Al4C3 (A75-1AC) sample was about 86%. X-ray diffractometry (XRD) analysis showed that the samples comprised only the 2H phase, and except in the case of the A50-3AC sample, no diffraction peaks of Al and C were observed. Although the samples without the additives (Al and C) were electrical insulators, addition of Al and C introduced p-type semiconduction. The electrical conductivities at 300°C of the A50-1AC and A50-3AC samples were about 30 and 100 S/m, respectively, whereas that of the A75-1AC sample was about 10–1 S/m. It was found that addition of Al and C brought about electrical conduction in AlN–SiC solid solutions.

Abstract: Poly- and single-crystalline BaTi2O5 co-substituted with SrO and ZrO2, Ba0.99Sr0.01(Ti1-xZrx)2O5 (BT2SZ) were prepared by arc-melting and floating-zone (FZ) melting, respectively. The specimens showed a significant (020) orientation. The highest permittivity of poly-crystalline BT2SZ was 3880 at x = 0.005 and that of single-crystal was 27000 at x = 0.005. The Curie temperature (Tc) of poly-crystals decreased from 750 to 640 K with increasing x from 0 to 0.026 and that of single-crystals decreased from 750 to 710 K with increasing x from 0 to 0.008. The highest remnant polarization of single crystalline BT2SZ was 7.8×10-2 Cm-2 at x = 0.008, higher than that of the poly-crystal.

Abstract: BaTi2O5 film was prepared on MgO (100) substrate by laser ablation, and the structure and electric property of the film were investigated. The film was b-axis oriented and epitaxially grown on the substrate along two in-plane directions with the a-axes ([100]-orientation) perpendicular to each other. The b-axis oriented BaTi2O5 film exhibited a sharp permittivity maximum (~ 2000) and had a high Curie temperature (750 K). The electrical conductivity increased with temperature and showed the Arrhenius relationship having an activation energy of 1.25 eV.

Abstract: Ca-Ru-O compounds were prepared by spark plasma sintering (SPS) using CaCO3 and RuO2 powders at various molar ratio of Ru to Ca (RRu/Ca). CaRuO3 in a single phase was obtained at RRu/Ca = 1.0. A non-stoichiometric solid solution range of CaRuO3 was identified at RRu/Ca = 0.7 to 1.0. The electrical conductivity (σ) showed metallic conduction behavior and increased with increasing RRu/Ca. The electrical conductivity at RRu/Ca = 0.8 to 1.0 increased with decreasing oxygen partial pressure (PO2) and the PO2 dependence of σ became significant with increasing temperature.