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Articles by author: S.R. Smith

• Deep Level near E_C – 0.55 eV in Undoped 4H-SiC Substrates
  Published in: Silicon Carbide and Related Materials 2005 (p505)
• Deep Levels in SiC:V by High Temperature Transport Measurements
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p545)
• Phonon Spectrum of Band-to-Band Optical Transitions in 6H-SiC as Determined by Optical Admittance Spectroscopy
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p569)
• Thermal Activation Energies for the Three Inequivalent Lattice Sites for the B_Si Acceptor in 6H-SiC
  Published in: Defects in Semiconductors 19 (p691)
• Trapping Recombination Process and Persistent Photoconductivity in Semi-Insulating 4H SiC
  Published in: Silicon Carbide and Related Materials 2005 (p563)
• Vanadium-free Semi-insulating 4H-SiC Substrates
  Published in: Silicon Carbide and Related Materials - 1999 (p21)