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Papers by Author: S.Yu. Karpov

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Study of Al Incorporation in Chemical Vapor Deposition of p-Doped SiC

Authors: A.S. Segal, S.Yu. Karpov, A.V. Lobanova, Eugene YAKOVLEV, K. Hara, Masami Naito

Abstract: Quasi-thermodynamic model of SiC doping with Al in CVD from C₃H₈, SiH₄, and Al (CH₃)₃ on the Si-face is developed. The model is validated by quantitative agreement of calculated and experimental data on the Al concentration in SiC as a function of temperature, pressure, SiC growth rate, and TMAl flow rate. The model is shown to be consistent with the site competition mechanism of Al incorporation into SiC.

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Analysis of Threading Dislocations in Wide-Bandgap Hexagonal Semiconductors by Energetic Approach

Authors: A.K. Semennikov, S.Yu. Karpov, M.S. Ramm, A.E. Romanov, Yuri Makarov

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Theoretical Analysis of the Mass Transport in the Powder Charge in Long-Term Bulk SiC Growth

Authors: A.V. Kulik, M.V. Bogdanov, S.Yu. Karpov, M.S. Ramm, Yuri Makarov

Faceted Growth of SiC Bulk Crystals

Authors: I.D. Matukov, D.S. Kalinin, M.V. Bogdanov, S.Yu. Karpov, D.Kh. Ofengeim, M.S. Ramm, J.S. Barash, E.N. Mokhov, A.D. Roenkov, Yu.A. Vodakov, M.G. Ramm, Heikki Helava, Yuri Makarov

Analysis of Graphitization during Physical Vapor Transport Growth of Silicon Carbide

Authors: Peter J. Wellmann, Z.G. Herro, Sakwe Aloysius Sakwe, Pierre M. Masri, M.V. Bogdanov, S.Yu. Karpov, A.V. Kulik, M.S. Ramm, Yuri Makarov

Growth of AlN Bulk Crystals by Sublimation Sandwich Method

Authors: E.N. Mokhov, A.D. Roenkov, Yu.A. Vodakov, S.Yu. Karpov, M.S. Ramm, A.S. Segal, Yu.A. Makarov, Heikki Helava

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Dynamics of 4H-SiC Plasticity

Authors: S.Yu. Karpov, A.V. Kulik, M.S. Ramm, Yuri Makarov

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Growth of Faceted Free-Spreading SiC Bulk Crystals by Sublimation

Authors: E.N. Mokhov, M.G. Ramm, M.S. Ramm, A.D. Roenkov, Yu.A. Vodakov, S.Yu. Karpov, Yu.A. Makarov, Heikki Helava

AlN Crystal Growth by Sublimation Technique

Authors: S.Yu. Karpov, A.V. Kulik, M.S. Ramm, E.N. Mokhov, A.D. Roenkov, Yu.A. Vodakov, Yuri Makarov

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Influence of Silicon Gas-to-Particle Conversion on SiC CVD in a Cold-Wall Rotating-Disc Reactor

Authors: A.N. Vorob'ev, M.V. Bogdanov, A.E. Komissarov, S.Yu. Karpov, O.V. Bord, A.A. Lovtsus, Yuri Makarov

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