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Articles by author: S.Yu. Karpov

• AlN Crystal Growth by Sublimation Technique
  Published in: Silicon Carbide and Related Materials 2000 (p779)
• Analysis of Graphitization during Physical Vapor Transport Growth of Silicon Carbide
  Published in: Silicon Carbide and Related Materials 2003 (p55)
• Analysis of Threading Dislocations in Wide-Bandgap Hexagonal Semiconductors by Energetic Approach
  Published in: Silicon Carbide and Related Materials 2003 (p383)
• Dynamics of 4H-SiC Plasticity
  Published in: Silicon Carbide and Related Materials - 2002 (p297)
• Effect of Elastic Strain on Growth of Ternary Group-III Nitride Compounds
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p1189)
• Faceted Growth of SiC Bulk Crystals
  Published in: Silicon Carbide and Related Materials 2003 (p63)
• Growth of AlN Bulk Crystals by Sublimation Sandwich Method
  Published in: Silicon Carbide and Related Materials - 2002 (p979)
• Growth of Faceted Free-Spreading SiC Bulk Crystals by Sublimation
  Published in: Silicon Carbide and Related Materials - 2002 (p29)
• Influence of Silicon Gas-to-Particle Conversion on SiC CVD in a Cold-Wall Rotating-Disc Reactor
  Published in: Silicon Carbide and Related Materials 2000 (p107)
• Mass Transport and Powder Source Evolution in Sublimation Growth of SiC Bulk Crystals
  Published in: Silicon Carbide and Related Materials 2000 (p37)
• Theoretical Analysis of the Mass Transport in the Powder Charge in Long-Term Bulk SiC Growth
  Published in: Silicon Carbide and Related Materials 2003 (p67)
• Virtual Reactor: A New Tool for SiC Bulk Crystal Growth Study and Optimization
  Published in: Silicon Carbide and Related Materials 2000 (p57)