Papers by Author: Sakito Miki

Abstract: We have recently proposed and demonstrated a new device concept, “Si-based single-dopant atom device”, consisting of only one or a few dopant atoms in the channel of Si field-effect transistors. The device characteristics are determined by a dopant, which is mediating electron or hole transport between source and drain electrodes. In this paper, our recent results on electronic and photonic applications are introduced. Furthermore, single-dopant images obtained by a scanning probe microscope are also presented.

Abstract: Transistors have been significantly downsized over the past decades, reaching channel dimensions of around 100 nm. In nanoscale, quantum effects start to play a key role in device operation, allowing the development of applications based on new physics. In silicon nanodevices, for instance, the device downsizing is associated with a reduction of the number of impurities (dopants) incorporated in the channel. Dopants can play an active role in device operation, mediating the electron transport between source and drain. Here, we present a new device concept of a memory based on the interaction between dopants in nanoscale field-effect transistors. As a basis for memory operation, we show experimental results of single-electron charging in individual dopants monitored by a single-electron current flowing through a dopant array.

Abstract: An individual dopant atom may become the active unit of future electronic devices by mediating single-electron transport in nanoscale field-effect transistors. Single dopants can be accessed electrically even in a dopant-rich environment, offering the opportunity to develop applications based on arrays of dopants. Here, we focus on single-electron turnstile operation in arrays of dopant-induced quantum dots realized in highly-doped nanoscale transistors. We show that dopant-based single-electron turnstile can be achieved and tuned with a combination of two gates and we indicate guidelines for further optimization.