HOME CONTACT My eBook

Username: Password:

> @scientific.net

Articles by author: Sandro Solmi

• Analysis of the Electrical Activation of P⁺ Implanted Layers as a Function of the Heating Rate of the Annealing Process
  Published in: Silicon Carbide and Related Materials 2006 (p571)
• Analysis of the Electron Traps at the 4H-SiC/SiO₂ Interface of a Gate Oxide Obtained by Wet Oxidation of a Nitrogen Pre-Implanted Layer
  Published in: Silicon Carbide and Related Materials 2008 (p533)
• Characterization of a Thermal Oxidation Process on SiC Preamorphized by Ar Ion Implantation
  Published in: Silicon Carbide and Related Materials 2003 (p1357)
• Characterization of MOS Capacitors Fabricated on n-type 4H-SiC Implanted with Nitrogen at High Dose
  Published in: Silicon Carbide and Related Materials 2006 (p639)
• Characterization of Phosphorus Implanted n⁺/p Junctions Integrated as Source/Drain Regions in a 4H-SiC n-MOSFET
  Published in: Silicon Carbide and Related Materials 2008 (p687)
• Competition between Oxidation and Recrystallization in Ion Amorphized (0001) 6H-SiC
  Published in: Silicon Carbide and Related Materials 2004 (p665)
• Dependence of Phosphorus Transient Enhanced Diffusion on Depth Position of Extended Defects in Ion Implanted Silicon
  Published in: Gettering and Defect Engineering in Semiconductor Technology (p243)
• Dependence of the Transient Enhanced Diffusion, of B in Si, upon B Concentration and Ion Implanted Dose
  Published in: Gettering anf Defect Engineering in Semiconductor Technology IX (p177)
• Dopant Anomalous Diffusion Induced in Silicon by Ion Implantation
  Published in: Ion Implantation in Semiconductors (p65)
• Effects of N Implantation before Gate Oxidation on the Performance of 4H-SiC MOSFET
  Published in: Silicon Carbide and Related Materials 2008 (p761)
• Evolution of Monoclinic SiAs Precipitates in Heavily As⁺ Implanted and Isothermally Annealed Silicon
  Published in: Gettering and Defect Engineering in Semiconductor Technology (p393)
• Fabrication of MOS Capacitors by Wet Oxidation of p-Type 4H-SiC Preamorphized by Nitrogen Ion Implantation
  Published in: Silicon Carbide and Related Materials 2006 (p651)
• Improvement of Electron Channel Mobility in 4H SiC MOSFET by Using Nitrogen Implantation
  Published in: Silicon Carbide and Related Materials 2007 (p699)
• Nitridation of the SiO₂/SiC Interface by N⁺ Implantation: Hall versus Field Effect Mobility in n-Channel Planar 4H-SiC MOSFETs
  Published in: Silicon Carbide and Related Materials 2009 (p491)
• Non-Nitridated Oxides: Abnormal Behaviour of N-4H-SiC/SiO₂ Capacitors at Low Temperature Caused by near Interface States
  Published in: Silicon Carbide and Related Materials 2010 (p346)