Papers by Author: Satoshi Wada

Abstract: Direct observations for high frequency microscopic dielectric distributions in cross sections of a multi-layer ceramic capacitor were carried out using non-contact type microwave probe. The measured data were imaged from the raw data and rounding data process. Using microwave reflection intensity mappings from cross sections of multi-layer ceramic capacitor, the dielectric permittivity distribution in micro-region of a multi-layer ceramic capacitor was measured at room temperature. The spatial resolution was experimentally estimated to be about 10 μm from mappings of the dielectric and inner electrode layers in a multi-layer ceramic capacitor.

Abstract: beta-FeSi2 films were prepared on Si(001) substrates by the molecular beam epitaxy method using an Fe source. The crystallographic orientation of beta-FeSi2 films on Si(001) substrates were characterized by using x-ray diffraction. Using scanning electron microscopy, surface morphology and film thickness of an oriented sample were observed and estimated. The mobility of beta-FeS2 films on Si(001) substrates was also characterized by Hall measurement at room temperature. The enhancement of figure of merit was evaluated as the functions of mobility and crystallographic orientation of samples.

Abstract: To induce fine engineered domain configurations into potassium niobate (KNbO3) single crystals, two kinds of methods were performed, i.e., (1) high DC electric field exposure along the opposite direction of polarization of KNbO3 single-domain crystals at room temperature, and (2) introduction of randomly oriented fine domain configuration by heat treatment at 700 °C and then high DC electric field exposure along [001]c direction of KNbO3 multidomain crystals at room temperature. When the method (1) was performed, finally, the poled KNbO3 crystals became to single-domain state again through the formation of multidomain state. On the other hand, the KNbO3 multidomain crystals were obtained by using the method (2), and an enhancement of piezoelectric-related properties was observed.

Abstract: The phase transition behaviors of the [111]c oriented barium titanate (BaTiO3) single crystals (the subscript c means the cubic notation system) were investigated as functions of temperature, uniaxial stress and electric fields. These results suggested that above Tc, combination between uniaxial stress and electric fields might be effective for a poling treatment of BaTiO3 single crystals. Thus, a new poling method for BaTiO3 single crystals was proposed using control of temperature, uniaxial stress and electric fields in this study.

Abstract: Barium titanate (BaTiO3) fine particles were prepared using the 2-step thermal decomposition method of barium titanyl oxalate. At the 2nd step of this method, the intermediate compound (Ba2Ti2O5·CO3) was decomposed into BaTiO3 and CO2 under various degrees of vacuum pressure. As a result, the particle size of prepared BaTiO3 nanoparticles decreased with decreasing pressure. Moreover, the dielectric constants of these BaTiO3 nanoparticles were measured using the powder dielectric measurement method using slurry. The dielectric constant of BaTiO3 nanoparticles increased with decreasing pressure at the same particle size. It is considered that mesoscopic particle structure controlled by vacuum pressure is important for the dielectric properties of BaTiO3 nanoparticles.

Abstract: Barium titanate (BaTiO3) nanoparticles with various particle sizes from 20 to 430 nm were prepared using a 2-step thermal decomposition method. Powder dielectric measurement clarified that dielectric constant of BaTiO3 particles with 140 nm exhibited a maximum around 5,000. To explain this high dielectric constant, THz-region dielectric properties of BaTiO3 nanoparticles, especially Slater transverse optic (TO) mode frequency, were estimated using the far infrared (FIR) reflection method. As the result, it was found that the Slater TO mode of BaTiO3 particles with 140 nm exhibited a minimum. Therefore, the high dielectric constant around 5,000 at 140 nm can be originated from the softening of the Slater TO mode.

Abstract: The microwave reflection intensity was measured at room temperature for Cu-plate, Al2O3 and SrTiO3 single crystals using a un-contact probe as a function of distance between sample and probe. The difference of reflection intensity for Cu-plate, Al2O3 and SrTiO3 single crystals was observed in the region where the distance of 0.2mm between sample and probe, and it was caused from dielectric permittivities of samples. The reflection coefficient of sample was estimated in comparison with results of electromagnetic simulation using finite differential time domain method. The reflection intensity for Cu-plate, Al2O3 and SrTiO3 single crystals was transformed to dielectric permittivity at reflection intensity minimum point. The dielectric permittivity mapping was also examined at reflection intensity minimum point.

Abstract: For the [111] oriented barium titanate (BaTiO3) single crystals, the patterning electrode was applied to induce the finer engineered domain configurations with domain size of 3 2m. The poling treatment was performed at 134 °C under electric fields below 6 kV/cm to inhibit the burning of the patterning electrode with photoresist. As the results, the gradient domain sizes from 3 to 8-9 2m were induced into the 31 resonator. The d31 was measured at -243.2 pC/N, and this value was almost 70 % of the expected d31 of –337.7 pC/N for the resonator with domain size of 3 2m. This difference was originated from lower applied electric field below 6 kV/cm. However, this study was revealed that the patterning electrode was very powerful tool to induce much finer domain sizes below 5 2m.

Abstract: For potassium niobate (KNbO3) single crystal, the 31 resonators with the highest piezoelectric constant d31 were designed using transformation of axis. We confirmed that the engineered domain configurations with maximum d31 of –55.1 pC/N was caused by a combination between two polarization with polar directions along [101]c and [-101]c directions. Moreover, if there are larger piezoelectric constants from domain wall region, we can expect the much higher piezoelectric properties. To induce the above domain configuration, a new poling method using patterning electrode was investigated. In this study, the two methods on the basis of temperature-induced phase transition at 207 °C and electric-field-induced phase transition at room temperature were investigated.