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Articles by author: Siegmund Greulich-Weber

• New Aspects in n-type Doping of SiC with Phosphorus
  Published in: Silicon Carbide and Related Materials 2005 (p609)
• New Insight in Scandium-Mediated Growth Techniques: Sc-Related Defects in 4H-SiC and 6H-SiC
  Published in: Silicon Carbide and Related Materials 2006 (p469)
• Nitrogen Donor Aggregation in 4H-SiC: g-Tensor Calculations
  Published in: Silicon Carbide and Related Materials 2006 (p391)
• Possible Role of Hydrogen within the So-Called X Center in Semi-Insulating 4H-SiC
  Published in: Silicon Carbide and Related Materials 2005 (p559)
• Radiation-Induced Pair Defects in 6H-SiC Studied by Optically Detected Magnetic Resonance
  Published in: Silicon Carbide and Related Materials 2000 (p505)
• Sol-Gel Silicon Carbide for Photonic Applications
  Published in: Silicon Carbide and Related Materials 2005 (p759)
• Spin-Coupling in Heavily Nitrogen-Doped 4H-SiC
  Published in: Silicon Carbide and Related Materials 2008 (p343)
• Textile Solar Cells Based on SiC Microwires
  Published in: Silicon Carbide and Related Materials 2008 (p239)
• The Structure of Au-Li and Pt-Li Complexes in Silicon
  Published in: Defects in Semiconductors 17 (p1173)
• The V_SiC_Si(Si_CC_Si) Complex in Electron-Irradiated 6H-SiC
  Published in: Silicon Carbide and Related Materials 2004 (p477)
• Trapping Recombination Process and Persistent Photoconductivity in Semi-Insulating 4H SiC
  Published in: Silicon Carbide and Related Materials 2005 (p563)