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Articles by author: Stanislav I. Soloviev

• Advances in Silicon Carbide Single Photon Detectors
  Published in: Silicon Carbide and Related Materials 2010 (p543)
• Aluminum and Boron Diffusion into (1-100) Face SiC Substrates
  Published in: Silicon Carbide and Related Materials 2001 (p557)
• An Analytical Study of the SiC Growth Process from Vapor Phase
  Published in: Silicon Carbide and Related Materials - 1999 (p35)
• An X-Ray Topographic Analysis of the Crystal Quality of Globally Available SiC Wafers
  Published in: Silicon Carbide and Related Materials 2006 (p227)
• Avalanche Multiplication and Impact Ionisation in Separate Absorption and Multiplication 4H-SiC Avalanche Photodiodes
  Published in: Silicon Carbide and Related Materials 2007 (p1207)
• Bipolar Degradation in 4H-SiC Thyristors
  Published in: Silicon Carbide and Related Materials 2011 (p1175)
• Characterisation of Low Noise 4H-SiC Avalanche Photodiodes
  Published in: Silicon Carbide and Related Materials 2009 (p1081)
• Correlation between Thermal Oxide Breakdown and Defects in n-Type 4H-SiC Epitaxial Wafers
  Published in: Silicon Carbide and Related Materials 2007 (p775)
• Determination of Impact Ionization Coefficients Measured from 4H Silicon Carbide Avalanche Photodiodes
  Published in: Silicon Carbide and Related Materials 2006 (p339)
• Effect of Crystal Defects on Reverse I-V Characteristics of 4H-SiC APDs
  Published in: Silicon Carbide and Related Materials 2005 (p427)
• Electrical Characterization of Ni/Porous SiC/n-SiC Structure
  Published in: Silicon Carbide and Related Materials - 2002 (p419)
• Formation of Stacking Faults in Diffused SiC p⁺/n^-/n⁺ and p⁺/p^-/n⁺ Diodes
  Published in: Silicon Carbide and Related Materials 2003 (p525)
• Influence of Defects in 4H-SiC Avalanche Photodiodes on Geiger-Mode Dark Count Probability
  Published in: Silicon Carbide and Related Materials 2008 (p877)
• Observation of Luminescence from Defects in 4H-SiC APDs Operating in Avalanche Breakdown
  Published in: Silicon Carbide and Related Materials 2007 (p1211)
• Oxidation of Porous 4H-SiC Substrates
  Published in: Silicon Carbide and Related Materials 2001 (p1113)