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Articles by author: T. Saitoh

• Characterization of Grain Boundaries of Al-doped Sintered β-SiC by Both HRTEM and STEM
  Published in: Intergranular and Interphase Boundaries in Materials (p269)
• Determination of Interface State Density Distribution and Surface Recombination Velocity on Passivated Semiconductor Surfaces by Photoluminescence Surface State Spectroscopy
  Published in: Passivation of Metals and Semiconductors (p53)
• Fracture Behavior and Acceptance Size of Flaw for Pressurized Piping
  Published in: Fracture and Strength '90 (p555)
• High Energy Si, Zn and Ga Ion Implantation into GaAs on Si
  Published in: Defects in Semiconductors 18 (p1881)
• Preparation and Ionic Substitution of Dion-Jacobson Type Compounds CsLa(M,Mn)_nO_3n+1(M=Nb,Ta;n=2,3)
  Published in: Electroceramics in Japan II (p243)