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Articles by author: Toshihiko Hayashi

• Characterization of SiC Wafers by Photoluminescence Mapping
  Published in: Silicon Carbide and Related Materials 2005 (p711)
• Growth of Micropipe Free Crystals on 4H-SiC {03-38} Seeds
  Published in: Silicon Carbide and Related Materials 2005 (p35)
• Nondestructive Analysis of Stacking Faults in 4H-SiC Bulk Wafers by Room-Temperature Photoluminescence Mapping under Deep UV Excitation
  Published in: Silicon Carbide and Related Materials 2006 (p275)
• Studies of Thermal Anisotropy in 4H-, 6H-SiC Bulk Single Crystal Wafers by Photopyroelectric (PPE) Method
  Published in: Silicon Carbide and Related Materials 2007 (p521)