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Articles by author: V. Higgs

• Characterisation of Dislocations in the Presence of Transition Metal Contamination
  Published in: Defects in Semiconductors 16 (p1309)
• Gettering Strength Assessment Based on Lifetime Measurements
  Published in: Gettering and Defect Engineering in Semiconductor Technology VIII (p259)
• Influence of Cu Contamination and Hydrogenation on Recombination Activity of Misfit Dislocations in SiGe/Si Epilayers
  Published in: Defects in Semiconductors 18 (p383)
• Luminescence Associated with Rod-Like Defects in Czochralski Silicon
  Published in: Defects in Semiconductors 17 (p1499)
• Luminescence of Dislocations in SiGe/Si Structures
  Published in: Gettering and Defect Engineering in Semiconductor Technology (p291)
• Photoluminescence from Defects in Silicon Grown by Molecular Beam Epitaxy
  Published in: Defects in Semiconductors 15 (p379)
• Scanning Deep Level Transient Spectroscopy Measurements of Extended Defects in Silicon
  Published in: Polycrystalline Semiconductors IV (p63)
• Scanning Photoluminescence for Wafer Characterization
  Published in: Beam Injection Assessment of Defects in Semiconductors (p421)
• The Influence of Metallic Contamination on the Lattice Relaxation of Ge_xSi_1-x Epitaxial Alloys
  Published in: Shallow Impurities in Semiconductors IV (p351)