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Articles by author: Vladimir Dmitriev

• 4H-SiC CVD Epitaxial Layers with Improved Structural Quality Grown on SiC Wafers with Reduced Micropipe Density
  Published in: Silicon Carbide and Related Materials - 1999 (p505)
• 4H-SiC Device Scaling Development on Repaired Micropipe Substrates
  Published in: Silicon Carbide and Related Materials - 1999 (p1203)
• 4H-SiC Layers Grown by Liquid Phase Epitaxy on 4H-SiC Off-Axis Substrates
  Published in: Silicon Carbide and Related Materials - 1999 (p229)
• 4H-SiC Power Schottky Diodes. On the Way to Solve the Size Limiting Issues
  Published in: Silicon Carbide and Related Materials 2003 (p985)
• Crystal Structure and Optical Properties of Bulk GaN Crystals Grown from a Melt at Reduced Pressure
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p1331)
• Diffusion-Welded Al Contacts to p-Type SiC
  Published in: Silicon Carbide and Related Materials - 2002 (p697)
• Dissolution and Growth of Silicon Carbide Crystals in Melt-Solutions
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p73)
• GaN Grown by Hydride - Metal Organic Vapor Phase Epitaxy (H-MOVPE) on Lattice-Matched Oxide and Silicon Substrates
  Published in: Silicon Carbide and Related Materials 2001 (p1473)
• Growth of SiC and GaN on Porous Buffer Layers
  Published in: Silicon Carbide and Related Materials - 1999 (p225)
• High Quality 6H- and 4H-SiC pn Structures with Stable Electric Breakdown Grown by Liquid Phase Epitaxy
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p163)
• HVPE GaN and AIGaN 'Substrates' for Homoepitaxy
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p1121)
• Liquid-Phase Epitaxial Growth of Heavily Doped Al p-Type Contact Layers for SiC Devices and Resulting Ohmic Contacts
  Published in: Silicon Carbide and Related Materials 2001 (p291)
• Micropipe Healing in Liquid Phase Epitaxial Growth of SiC
  Published in: Silicon Carbide and Related Materials - 1999 (p237)
• Power Schottky and p-n Diodes on SiC Epi-Wafers with Reduced Micropipe Density
  Published in: Silicon Carbide and Related Materials 2001 (p1173)
• SiC Defect Density Reduction by Epitaxy on Porous Surfaces
  Published in: Silicon Carbide and Related Materials 2000 (p115)