Papers by Author: W. Gehlhoff

Abstract: We present ultra-shallow diffusion profiles performed by short-time diffusion of boron from the gas phase using controlled surface injection of self-interstitials and vacancies into the ntype Si(100) wafers. The diffusion profiles of this kind are found to consist of both longitudinal and lateral silicon quantum wells of the p-type that are self-assembled between the layers of microdefects, which are produced by previous oxidation. These layers appear to be passivated during short-time diffusion of boron thereby forming neutral d - barriers. The fractal type selfassembly of microdefects is found to be created by varying the thickness of the oxide overlayer, which represents the system of microcavities embedded in the quantum well plane.