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Papers by Author: W. Jung

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Fabrication and Characterization of n-ZnO/p-SiC Heterojunction Diode

Authors: M. Guziewicz, W. Jung, R. Kruszka, J. Domagala, Anna B. Piotrowska, K. Gołaszewska, L. Wachnicki, E. Guziewicz, Marek Godlewski

Abstract: ZnO as well as SiC are wide bangap materials with prospective electronic applications. Very good lattice matching of the materials allowed formation a n-ZnO/p-SiC heteroepitaxial junction. The n˗ZnO film was epitaxially grown onto the p-SiC substrate using the atomic layer deposition method. The fabricated p-n diode was studied by I-V and C-V characteristics as well as by impedance spectroscopy. The diode shows a high rectifying ratio of 10⁷ and an ideality factor of 1.21.

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Correlation between Intrinsic Stress Distribution and Crystallographic Defects Density Profile in Czochralski Silicon after CMOS Processing

Authors: T. Piotrowski, W. Jung

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Effect of Stress Induced Defects on Electrical Properties of Czochralski Grown Silicon

Authors: Andrzej Misiuk, W. Jung, Barbara Surma, J. Jun, M. Rozental

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Diffusion Effects and Luminescence in Thin SiGe/Si Layers

Authors: M Gail, W. Jung, J. Brunner, P. Schittenhelm, J.F. Nützel, G. Abstreiter

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