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Articles by author: W.M. Chen

• A Deep Photoluminescence Band in 4H SiC Related to the Silicon Vacancy
  Published in: Defects in Semiconductors 19 (p685)
• A Metastable Selenium-Related Center in Silicon
  Published in: Defects in Semiconductors 17 (p159)
• A New Defect Observed in Annealed Phosphorus-Doped Electron-Irradiated Silicon
  Published in: Defects in Semiconductors 16 (p333)
• A Novel P_Ga- Antisite Related Deep Isoelectronic Complex Defect in Gold- And Lithium-Doped GaP
  Published in: Defects in Semiconductors 15 (p899)
• As-Grown 4H-SiC Epilayers with Magnetic Properties
  Published in: Silicon Carbide and Related Materials 2003 (p747)
• Bandstructure and Transport Properties of 4H- and 6H-SiC: Optically Detected Cyclotron Resonance Investigations
  Published in: Silicon Carbide and Related Materials - 1999 (p559)
• Chromium in 4H and 6H SiC: Photoluminescence and Zeeman Studies
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p603)
• Defect Formation and Recombination Processes in p-Type Modulation-Doped Si Epilayers
  Published in: Defects in Semiconductors 18 (p479)
• Effect of TiO₂ on the Mechanical Properties of the K₂O-MgO-SiO₂-CaF₂ Glass-Ceramics
  Published in: The Science of Engineering Ceramics II (p185)
• Electronic Structure of Neutral Complex Defects in Silicon
  Published in: Defects in Semiconductors 14 (p97)
• Electronic Structure of P_In Antisite in InP
  Published in: Defects in Semiconductors 17 (p211)
• Electronic Structure of the UD3 Defect in 4H- and 6H-SiC
  Published in: Silicon Carbide and Related Materials 2001 (p509)
• Formation of Ferromagnetic SiC:Mn Phases
  Published in: Silicon Carbide and Related Materials 2004 (p241)
• Hole Effective Masses in 4H SiC Determined by Optically Detected Cyclotron Resonance
  Published in: Silicon Carbide and Related Materials - 1999 (p563)
• Important Nonradiative Grown-In Defects in MBE-Grown Si and SiGe/Si Heterostructures
  Published in: Defects in Semiconductors 18 (p473)