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Papers by Author: W.S. Hobson

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The Role of Hydrogen in the Growth of III-V Compound Semiconductors by OMVPE

Authors: W.S. Hobson

Unintentional Hydrogenation of III-V Semiconductors during Device Processing

Authors: Stephen J. Pearton, C.R. Abernathy, W.S. Hobson, U.K. Chakrabarti, J. Lopata, D.M. Kozuch, Michael Stavola

617

Passivation of Shallow Acceptors in Si and GaAs by Annealing in H₂

Authors: I.A. Veloarisoa, D.M. Kozuch, Michael Stavola, R.E. Peale, G.D. Watkins, Stephen J. Pearton, C.R. Abernathy, W.S. Hobson

111

Anomalous Damage Depths in Low-Energy Ion Beam Processed III-V Semiconductors

Authors: Stephen J. Pearton, F. Ren, T.R. Fullowan, R.F. Kopf, W.S. Hobson, C.R. Abernathy, A. Katz, U.K. Chakrabarti, V. Swaminathan

1439

Characterization of GaAs/AlGaAs Heterostructures Grown by OMVPE Using Trimethylamine Alane as a New Aluminum Source

Authors: W.S. Hobson, S.R. McAfee, Kevin S. Jones, N.G. Paroskevopoulos, C.R. Abernathy, S.K. Sputz, T.D. Harris, M. Lamont Schnoes, Stephen J. Pearton

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