Papers by Author: Y. Goldstein

Abstract: The properties of SiOx layer prepared by magnetron sputtering is studied by photoluminescence Auger and SIMS methods. The depth distribution of emission characteristics and chemical composition is obtained. It is shown that as-sputtered SiOx layers are non-emitted and characterized by homogeneous enough chemical composition. High-temperature annealing in nitrogen atmosphere stimulates not only the Si nanocrystal formation but also the redistribution of silicon and the appearance of Si depleted region near layer-substrate interface. The last process is found to be dependent on excess Si content. It is found that decrease of silicon content in the depth of annealed layers is followed by the decrease of particle sizes that is proved by the blue shift of photoluminescence maximum. The possible reasons of the appearance of Si depleted region are discussed.

Abstract: The properties of SiOx layer prepared by magnetron sputtering is studied by photoluminescence Auger and SIMS methods. The depth distribution of emission characteristics and chemical composition is obtained. It is shown that as-sputtered SiOx layers are non-emitted and characterized by homogeneous enough chemical composition. High-temperature annealing in nitrogen atmosphere stimulates not only the Si nanocrystal formation but also the redistribution of silicon and the appearance of Si depleted region near layer-substrate interface. The last process is found to be dependent on excess Si content. It is found that decrease of silicon content in the depth of annealed layers is followed by the decrease of particle sizes that is proved by the blue shift of photoluminescence maximum. The possible reasons of the appearance of Si depleted region are discussed.

Abstract: The effect of preparation conditions and annealing treatment on Si-rich-SiOx layers was investigated. It was observed that oxygen plays important role in the creation of light-emitting centres. It was found that the emission in the green-orange spectral range is connected with silicon oxide defects which contain dangling bonds. At the same time PL band in the infrared spectral range is caused by recombination of carriers in amorphous silicon or nanocrystalline one. It is shown that modification of defect content under various treatments gives the possibility to control the emission properties of the layers.

Abstract: The aging process of silicon nanostructures obtained by magnetron sputtering and electrochemical etching is investigated by photoluminescence and Raman scattering methods. It is shown that oxidation of silicon crystallites takes place in both types of structures and results in appearance of additional emission bands. However the degree of oxidation in etched structures exceeds significantly this value for sputtered samples. It is found that the intensity and spectral position of the emission band caused by exciton recombination in Si crystallites do not change practically during aging in sputtered structures in contrast to etched ones. It is shown that the oxidation of silicon amorphous phase occur during aging in sputtered structures.