Papers by Author: Yan Sheng Gong

Abstract: In this study, K3Li2-xNb5+xO15+2x (KLN) thin films were prepared by laser-ablated a sintered ceramic target. For an optimum deposition condition, in-situ post annealing method was employed on as-deposited films. XRD measurements showed that KLN films with (310) preferred orientation were obtained on fused quartz substrate. Surface morphology studies indicated that in-situ post annealing could improve the surface quality of KLN thin films. The average transmittance of as-deposited and annealed films in the visible range was nearly 80% to 90%.

Abstract: Potassium lithium niobate (KLN: K3Li2Nb5O15) films have been deposited on quartz glass by Pulsed laser deposition (PLD) technique using a stoichiometric KLN target as starting materials. By investigating the effects of both the oxygen pressure and the substrate temperature on the structure of KLN films, optimum parameters have been identified for the growth of high-quality KLN films. At 10Pa oxygen ambient pressure, tetragonal tungsten-bronze-type structure of KLN films with (310) preferred orientation can be achieved at substrate temperatures in the range of 700-800°C. Optical studies indicate that the films are highly transparent in the visible-near-infrared wavelength range.

Abstract: Highly conductive IrO2 thin films were prepared on Si (100) substrates by pulsed laser deposition technique from an iridium metal target in an oxygen ambient atmosphere. The effect of substrate temperature on the structure and electrical properties of IrO2 films was investigated. The deposited films at substrate temperatures ranging from 250 to 500°C under an oxygen pressure of 20Pa were pure polycrystalline tetragonal IrO2 and the preferential growth orientation changed with the substrate temperature. IrO2 films were well solidified with the fairly homogeneous thickness and exhibited a good adhesion with the substrate. The room-temperature resistivity of IrO2 films decreased with the increase of substrate temperature and the minimum resistivity of (42±6) μ-·cm was deposited at 500°C.