Papers by Author: Yuri I. Khlebnikov

Paper TitlePage

Graphitization of the Seeding Surface during the Heating Stage of SiC PVT Bulk Growth
Authors: Roman Drachev, Dimitri I. Cherednichenko, I.I. Khlebnikov, Yuri I. Khlebnikov, Tangali S. Sudarshan
99
Aluminum and Boron Diffusion into (1-100) Face SiC Substrates
Authors: Stanislav I. Soloviev, Ying Gao, Yuri I. Khlebnikov, I.I. Khlebnikov, Tangali S. Sudarshan
557
Influence of the Crystal Thickness on the SiC PVT Growth Rate
Authors: Dimitri I. Cherednichenko, Yuri I. Khlebnikov, Roman Drachev, I.I. Khlebnikov, Tangali S. Sudarshan
95
Characterization of Silicon Carbide using Raman Spectroscopy
Authors: J.C. Burton, F.H. Long, Yuri I. Khlebnikov, I.I. Khlebnikov, Mathew Parker, Tangali S. Sudarshan
615
Initial Stage of Crystallization in the Growth of Silicon Carbide on Substrate with Micropipes
Authors: I.I. Khlebnikov, Dimitri I. Cherednichenko, Yuri I. Khlebnikov, Tangali S. Sudarshan
59
An Analytical Study of the SiC Growth Process from Vapor Phase
Authors: Dimitri I. Cherednichenko, Yuri I. Khlebnikov, I.I. Khlebnikov, Stanislav I. Soloviev, Tangali S. Sudarshan
35
Rapid Anodic Oxidation of 6H-SiC
Authors: Yuri I. Khlebnikov, V. Madangarli, M.A. Khan, Tangali S. Sudarshan
873
Showing 1 to 7 of 7 Paper Titles