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Articles by author: Zsolt E. Horváth

• A Novel Technique for the Investigation of the Interface State Energy Distribution in Schottky Contacts: Evaluation from the I-V Characteristics
  Published in: Defects in Semiconductors 15 (p1271)
• Defect-Related Current Instabilities in InAs/GaAs and AlGaAs/GaAs Structures?
  Published in: Gettering anf Defect Engineering in Semiconductor Technology IX (p565)
• Dispersion of Carbon Nanotubes in Polycarbonate and Its Effect on the Composite Properties
  Published in: Advanced Materials Forum III (p1125)
• Electrophysical Parameters of the Metal-Semiconductor Interface in MBE and VPE Grown GaAs Schottky Contacts
  Published in: Molecular Beam Epitaxy (p99)
• Ion Bombardment Induced Damage in Silicon Carbide Studied by Ion Beam Analytical Methods
  Published in: Silicon Carbide and Related Materials 2000 (p271)
• Nanoparticle Formation during Laser Ablation
  Published in: Structure Development in Condensed Matter (p207)
• Optimization of the Amount of Catalyst and Reaction Time in Single Wall Nanotube Production
  Published in: Interfacial Effects and Novel Properties of Nanomaterials (p271)
• Passivation of Al/Si Interface by Chemical Treatment: Schottky Barrier Height and Plasma Etch Induced Defects
  Published in: Gettering anf Defect Engineering in Semiconductor Technology IX (p255)
• Preparation of Si₃N₄ Composites with Single Wall Carbon Nanotube and Exfoliated Graphite
  Published in: Materials Science, Testing and Informatics IV (p409)