Papers by Keyword: Alkoxy-Derived Precursor

Abstract: Y0.5Yb0.5MnO3 ferroelectrics/HfO2 stacking layers were successfully constructed on Si(100) substrates through the chemical solution deposition. The degree of c-axis orientation and microstructure of Y0.5Yb0.5MnO3 ferroelectrics was improved by the control of concentration of precursor solutions. Capacitance of Pt/Y0.5Yb0.5MnO3/HfO2/Si structure was almost constant over 104 s on the retention property.

Abstract: The Y0.5Yb0.5MnO3 ferroelectrics/HfO2 stacking layer was constructed on Si(100) substrate through the chemical solution deposition. The HfO2 insulating layer crystallized on Si(100) substrates consisted of uniform grains and had smooth surface. The Y0.5Yb0.5MnO3 film prepared on the HfO2 insulator layer had preferred orientation along c-axis. The Y0.5Yb0.5MnO3 film consisted of uniform grains and had smooth surface. The clockwise C-V hysteresis induced by ferroelectric polarization switching was observed in the MFIS structure. The memory window of the MFIS structure was about 2 V and the retention time was over 105 s.

Abstract: The (Y,Yb)MnO3 films were crystallized on Y2O3 layers using alkoxy-derived precursor solutions. As a result of investigation of the effect of the Y2O3 layer on the dielectric properties of the (Y,Yb)MnO3/Y2O3/Si, the crystallographic properties such as the orientation and surface morphology of the (Y,Yb)MnO3 thin films depended on the crystallographic appearance of the insulator layer. Following that, the dielectric properties of the MFIS structures varied. For the construction of excellent MFIS structure, the improvement of the orientation, crystallinity, and surface smoothness of the (Y,Yb)MnO3 film by the optimization of the microstructure and dielectric property of the insulator is necessary.