Papers by Keyword: Band Offset

Abstract: The Ge mole fraction (x) of Si_1-xGe_x layer was described by the C-V technique for Schottkey contact of single heterojunction Si_1-xGe_x/Si, whose structure profile can be characterized by SEM image and EDS. Then the strained Si cap layer was grown on the Si_1-xGe_x/Si, and C-V technique was used to determine the carrier concentration and structure of double heterojunction Si/Si_1-xGe_x/Si. The change of the structure between Si_1-xGe_x/Si and Si/ Si_1-xGe_x/Si was also observed by this method.

Abstract: In this study, new SiC-based heterojunction bipolar transistors (HBT) are proposed. An n-type AlN/GaN short-period superlattice (quasi-AlGaN) layer is grown on a SiC pn junction as a widegap emitter. By using quasi-AlGaN emitter, we have demonstrated successful control of band offset of AlGaN/SiC. Quasi-AlGaN/SiC HBT with an Al content over 0.5, which has no potential barrier to electron injection from an n-AlGaN emitter to a p-SiC base, exhibited a common-emitter current gain of β ~ 2.7, whereas the HBT with an Al content below 0.5 showed β ~ 0.1.