| Paper Title | Page |
|---|---|
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SiC/SiO2 Interface States: Properties and Models Authors: Valeri V. Afanas'ev, Florin Ciobanu, Sima Dimitrijev, Gerhard Pensl, Andre Stesmans |
563 |
|
A Raman Study of Metal-SiC Interface Reactions Authors: Eiji Kurimoto, Hiroshi Harima, Tadao Toda, Minoru Sawada, Shinichi Nakashima, Motohiro Iwami |
637 |
|
A Theoretical Study of Carbon Clusters in SiC: a Sink and a Source of Carbon Interstitials Authors: Alexander Mattausch, M. Bockstedte, Oleg Pankratov |
449 |
|
Fluorinated Fullerenes - Optical Spectra and Photo-Desorption Authors: K. Kan'no |
197 |
|
Authors: Alexander Mattausch, M. Bockstedte, Oleg Pankratov, John W. Steeds, S.A. Furkert, J.M. Hayes, W. Sullivan, Nicolas G. Wright |
465 |
|
Hypervalent Molecular Cluster: C28H4 Authors: M. Veljković, O. Nešković, A. Djerić, S. Veličković, V. Šipka |
181 |
|
Investigation of SiO2-SiC Interface by High-Resolution Transmission Electron Microscope Authors: Sima Dimitrijev, Ji Sheng Han, Jin Zou |
975 |
|
Study of Carbon in Thermal Oxide Formed on 4H-SiC by XPS Authors: P. Zhao, E. Rusli, Jun Hai Xia, Chung Ming Tan, Y. Liu, Chin Che Tin, S.F. Yoon, Weiguang Zhu, J. Ahn |
653 |
|
Authors: C. Radtke, Israel J.R. Baumvol, B.C. Ferrera, Fernanda Chiarello Stedile |
657 |
|
Thin-Film Compositions on Base of Hafnium Dioxide and Aluminum Oxide: Synthesis and Characterization Authors: M.S. Lebedev |
7 |