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Articles by keyword: «Density of Interface States»

• Control of the Flatband Voltage of 4H-SiC Metal-Oxide Semiconductor (MOS) Capacitors by Co-Implantation of Nitrogen and Aluminum
  Published in: Silicon Carbide and Related Materials 2006 (p555)
• Electrochemical and Electronic Passivation by Hydrogenation of n-Si(111)
  Published in: Passivation of Metals and Semiconductors (p83)
• Hall Effect in the Channel of 3C-SiC MOSFETs
  Published in: Silicon Carbide and Related Materials 2004 (p441)
• High Channel Mobility of 4H-SiC MOSFETs Fabricated by Over-Oxidation of the N-/Al-Coimplanted Surface Layer
  Published in: Silicon Carbide and Related Materials 2008 (p765)
• Interface States and Barrier Heights on Metal/4H-SiC Interfaces
  Published in: Silicon Carbide and Related Materials 2008 (p427)
• Interface States in 4H- and 6H-SiC MOS Capacitors: A Comparative Study between Conductance Spectroscopy and Thermal Dielectric Relaxation Current Technique
  Published in: Silicon Carbide and Related Materials 2008 (p497)
• Silicon Nanoclusters in Thermal Oxide Films on Silicon
  Published in: Gettering anf Defect Engineering in Semiconductor Technology IX (p613)
• Traps at the Interface of 3C-SiC/SiO₂-MOS-Structures
  Published in: Silicon Carbide and Related Materials - 2002 (p551)