Authors: Xue Feng Wu, Yu Fan
Abstract: An application of intelligent pressure detection and alarm system are studied in this paper . it is consists of the high integration, powerful function new microprocessor control, the internal integration of a large number of analog and digital peripheral module. The system has strong data processing ability. multifunctional intelligent hardware is not only realized in circuit necessary configuration,but also is a small size device. it ensure the intelligence function,and has the advantages of small volume, low cost, integration and strong anti-interference ability .
135
Authors: Yu Fan, Xue Feng Wu
Abstract: An application of intelligent pressure detection and alarm system are studied in this paper . it is consists of the high integration, powerful function new microprocessor control, the internal integration of a large number of analog and digital peripheral module. The system has strong data processing ability. multifunctional intelligent hardware is not only realized in circuit necessary configuration,but also is a small size device. it ensure the intelligence function,and has the advantages of small volume, low cost, integration and strong anti-interference ability .
730
Authors: Gui Hua Hu, Jun Ming Xu, Ji Jun Zhou, Xiaoping Hu
Abstract: Due to the negative effect of li-ion battery monomer inconsistent performance in electric bicycle, a low-cost intelligent li-ion BMS (battery management system) is designed based on atmega16. Multi-channel analog switch and differential amplifier are used for multi-channel data acquisition, and the equalization circuit is used for the balance of each single cell. The results show that the design can realize the intelligent management of li-ion battery.
335
Authors: Jie Yang, John Fraley, Bryon Western, Marcelo Schupbach, Alexander B. Lostetter
Abstract: APEI, Inc. designed, fabricated and tested a high gain AC coupled differential amplifier based on a custom-built silicon carbide (SiC) vertical junction field effect transistor (VJFET). This SiC differential amplifier is capable of high temperature operation up to 450 °C, at which a high differential voltage gain of more than 47 dB is maintained. This high gain AC coupled differential amplifier can be integrated with harsh environment sensors that deliver weak AC output signals to improve signal quality and noise immunity.
1253
Authors: Jie Yang, John Fraley, Bryon Western, Marcelo Schupbach, Alexander B. Lostetter
Abstract: APEI, Inc. designed, fabricated and tested a high gain AC coupled differential amplifier based on a custom-built silicon carbide (SiC) vertical junction field effect transistor (VJFET). This SiC differential amplifier is capable of extreme temperature operation up to 450 °C, at which a high differential voltage gain of more than 47 dB is maintained. This high gain AC coupled differential amplifier can be integrated with high temperature sensors that deliver weak AC output signals to improve signal quality and noise immunity.
746
Authors: Amita Patil, Xiao An Fu, Philip G. Neudeck, Glenn M. Beheim, Mehran Mehregany, Steven Garverick
Abstract: This paper presents silicon carbide sensor interface circuits and techniques for MEMSbased
sensors operating in harsh environments. More specifically, differential amplifiers were
constructed using integrated, depletion-mode, n-channel, 6H-SiC JFETs and off-chip passive
components. A three-stage voltage amplifier has a differential voltage gain of ~50 dB and a gainbandwidth
of ~200 kHz at 450oC, as limited by test parasitics. Such an amplifier could be used to
amplify the signals produced by a piezoresistive Wheatstone bridge sensor, for example. Design
considerations for 6H-SiC JFET transimpedance amplifiers appropriate for capacitance sensing and
for frequency readout from a micromechanical resonator are also presented.
1083
Authors: David J. Spry, Philip G. Neudeck, Liang Yu Chen, Glenn M. Beheim, Robert S. Okojie, Carl W. Chang, Roger D. Meredith, Terry L. Ferrier, Laura J. Evans
Abstract: This paper reports on the fabrication and testing of 6H-SiC junction field effect transistors
(JFETs) and a simple differential amplifier integrated circuit that have demonstrated 2000 hours of
electrical operation at 500 °C without degradation. The high-temperature ohmic contacts, dielectric
passivation, and packaging technology that enabled such 500 °C durability are briefly described. Key
JFET parameters of threshold voltage, on-state resistance, transconductance, and on-state current, as
well as the gain of the differential amplifier integrated circuit, exhibited less than 7% change over the
first 2000 hours of 500 °C operational testing.
1079