Papers by Keyword: Disorientation

Abstract: Low energy grain boundaries were considered to be important in abnormal grain growth by theoretical deduction. The disorientation angles and coincidence site lattice grain boundaries distribution of more than 20 Goss grains and their neighboring matrix grains in primary recrystallized Fe-3%Si alloy were investigated using an electron backscatter diffraction method. It was found that the frequency of low energy grain boundaries of Goss grains which are more likely to abnormally grow are higher than their neighboring matrix grains, which indicated that low energy grain boundaries play a dominant role in the abnormal grain growth of Fe-3%Si alloy. The result meets well with the abnormal grain growth theory.

Abstract: A good selection of growth parameters (in-situ etching, C/Si ratio, growth rate) enables obtaining of ~1nm high steps of epitaxial layers, which are comparable to the size of an elementary cell (8°off-axis) and achieve the density of BPD=8•103/cm2. Due to crystallization on substrates with low misorientation (<2°off-axis) it is possible to obtain epitaxial layers substantially lacking in BPD dislocations. However, a slightly more developed surface with Ra=1-2.5nm (1.25°, 2°off-axis) characterizes these layers. By lowering the C/Si ratio, morphology of layers crystallized on substrates with low misorientation was improved. Extending growth rate improved both the crystallographic quality of the grown layers and their polytype stability. Nevertheless, growth without BPDs, also referred to as the homogeneous (4H) polytypic growth on 4H-SiC on-axis substrates, is the most efficient way of defect elimination.

Abstract: A new method for reconstructing a three-dimensional microstructure using the focused ion beam-orientation imaging microscopy (FIB-OIM) is introduced. The technique is important for the study of three-dimensional microstructures of materials because it can automatically align (register) a series of parallel sections with both topological information and orientation information at the sub-micrometer scale. Using voxel-based tessellation, a three-dimensional microstructure is reconstructed by registering each section. The application of the method to a cubic material is described and, based on the reconstruction, the grain shape and grain size distribution are characterized.

Abstract: The eect of deformation-induced disorientations on work-hardening of metals is modelled by dislocation dynamics. By incorporating excess dislocations related to disori- entations, Kocks' dislocation model describing stage III hardening is extended to stage IV. Disorientations evolving from purely statistical reasons still lead to stage III behavior and a saturation of the ow stress, but deterministic contributions to the development of disorienta- tions, as dierences in activated slip systems across boundaries, cause a linear increase of the flow stress at large strains. Such a constant work-hardening rate is characteristic for stage IV.