Papers by Keyword: Epitaxial Relationship

Abstract: The morphology and structure of iron silicide nanorods formed on Si (111) vicinal surface by the SPE method at T = 630 °C were studied. Optimal Fe coverage and Fe deposition rate for the formation of a dense array of the nanorods (54-65% of the substrate area) on Si (111) surface with 3-4^o miscut angles were established. The aspect ratio of the nanorods is 1.9 – 3.3. Cross-sectional images of a high-resolution transmission electron microscopy (HRTEM) have shown that the nanorods have α-FeSi₂ crystal structure. They are strained along the “a” axis and stretched along the “c” axis, which increased the unit cell volume by 10.3%. According to HRTEM image analysis, the nanorods have the following epitaxial relationships: α-FeSi₂[01]//Si [10] and α-FeSi₂(112)//Si (111). All the data obtained have provided, for the first time, a direct evidence of α-FeSi₂ nanorods formation on Si (111) vicinal surface without noticeable penetration of Fe atoms into the Si substrate.

Abstract: The solid-state reaction between epitaxial hcp-Co (110) and fcc-Co (001) thin films and Pd layers was investigated at annealing temperatures between 250 and 650 °C using X-ray diffraction and magnetic measurements. No significant intermixing of the layers occurs at annealing temperatures below 400 °C. For the atomic composition 1Co:1Pd after annealing at 450 °C the disordered solid solution fcc-Co_xPd_1-x is formed on the Pd/hcp-Co (110) and Pd/fcc-Co (001) interfaces. Epitaxial relationships CoPd (110)〈-111〉 || MgO(001)〈100〉 and CoPd (001)〈100〉 || MgO(001)〈100〉 between the nucleated disordered phase CoPd and the substrate MgO(001) were determined for Pd/hcp-Co (110) and Pd/fcc-Co (001) bilayers, respectively. The first magnetocrystalline anisotropy constant of the disordered CoPd phase ​​K₁^CoPd = - (1.8 ± 0.4)·10⁴ J/m³ for the (110) and (001) orientations was obtained.

Abstract: To achieve AlN bulk growth, HTCVD chlorinated process is investigated. High growth rate and high crystalline quality are targeted for AlN films grown on (0001) α-Al2O3 and (0001) 4H or 6H SiC substrates between 1100 °C and 1750 °C. The precursors used are ammonia NH3 and aluminium chlorides AlClx species formed in situ by action of Cl2 on high purity Al wire. Both influences of temperature and carrier gas on microstructure, crystalline state and growth rate are presented. Growth rates higher than 190 μm.h-1 have been reached. Thermodynamic calculations were carried out to understand the chemistry of AlN deposition. AlN layers were characterized by SEM and θ/2θ X-Ray Diffraction. Their epitaxial relationships with substrates were deduced from pole figures obtained by X-Ray diffraction on a texture goniometer.

Abstract: The epitaxial relationship of Si deposited on 3C-SiC was studied using both free standing 3C-SiC(100) material from Hoya and 3C-SiC thin layers deposited on Si(100) as substrates. The conditions of Si growth were varied depending on the substrate. When Si is deposited at 1000°C on (001) 3C-SiC, it is in perfect epitaxial relation with the SiC layer [100]Si//[100]SiC and [001]Si//[001]SiC. After a 20 ms flash lamp pulse on the same sample, which has the effect of fast melting of the Si top layer only, the defects in the Si are eliminated. Using free standing 3C-SiC, the deposition temperature was not limited by the Si melting point so that it was fixed at 1500°C in order to form a set of Si liquid droplets on the surface with diameters ranging from 5 to 20 μm. Surprisingly more than 60% of the Si droplets exhibit the epitaxial relation [110]Si//[001]SiC and [111]Si//[110]SiC after crystallization. The occurrence of this epitaxial relationship can be understood in terms of lattice mismatch reduction from 20% to 18.3%. The conditions of crystallization, most probably the cooling rate, seem to have a strong effect on Si orientation.