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Articles by keyword: «FET»

• 5.0 kV 4H-SiC SEMOSFET with Low RonS of 88 m Ω cm²
  Published in: Silicon Carbide and Related Materials 2001 (p1199)
• A 600 V SiC Trench JFET
  Published in: Silicon Carbide and Related Materials 2001 (p1219)
• A Comparison of 1200 V Normally-OFF & Normally-on Vertical Trench SiC Power JFET Devices
  Published in: Silicon Carbide and Related Materials 2010 (p641)
• Characterization of Lanthanoid and Aluminum Based Oxide Film for Wide Bandgap Semiconductors
  Published in: THERMEC 2009 (p3943)
• Comparison of HF and Ozone Treated SiC Surfaces
  Published in: Silicon Carbide and Related Materials 2000 (p219)
• Effect of Gate Wet Reoxidation on Reliability and Channel Mobility of Metal-Oxide-Semiconductor Field-Effect Transistors Fabricated on 4H-SiC(000-1)
  Published in: Silicon Carbide and Related Materials 2007 (p791)
• Effect of Source and Drain Contacts Schottky Barrier on 3C-SiC Nanowire FETs I-V Characteristics
  Published in: Silicon Carbide and Related Materials 2008 (p235)
• Effects of High–Energy Neutrons on Advanced SOI MOSFETs
  Published in: Nanoscaled Semiconductor-on-Insulator Materials, Sensors and Devices (p95)
• Gate Control of Junction Impact Ionization Avalanche in SOI MISFETs: Theoretical Model
  Published in: Nanoscaled Semiconductor-on-Insulator Materials, Sensors and Devices (p43)
• High Performance RF FETs Using High-k Dielectrics on Wafer-Scale Quasi-Free-Standing Epitaxial Graphene
  Published in: Silicon Carbide and Related Materials 2011 (p669)
• High-Field Transport in Quantum-Well Nanostructures
  Published in: Semiconductor Materials and Technology (p192)
• Magnetic and Dielectric Properties of a Metal/ Cr₂O₃/Cr₂O_3-x/Cr₂O₃/Semiconductor Capacitor Using Magneto-Electric Materials
  Published in: Electroceramics in Japan X (p221)
• MISiCFET Chemical Gas Sensors for High Temperature and Corrosive Environment Applications
  Published in: Silicon Carbide and Related Materials 2001 (p1415)
• Organic Materials for Large Area Electronics
  Published in: Advances in Electronic Materials (p159)
• Recent Progress of AlGaN/GaN Heterojunction FETs for Microwave Power Applications
  Published in: Silicon Carbide and Related Materials 2001 (p1505)