Papers by Keyword: GaAs

Paper TitlePage

Vacancy Defects in Low-Temperature-Grown GaAs Observed by Continuous and Pulsed Slow Positrons

Authors: J. Gebauer, Reinhard Krause-Rehberg, S. Eichler, W. Bauer-Kugelmann, Gottfried Kögel, Werner Triftshäuser, M. Luysberg, Hoon Sohn, Eicke R. Weber

204

Annealing Behaviour of High Energy ¹²⁰Sn Implanted GaAs

Authors: Y.P. Ali, V.P. Salvi, A.M. Narsale, B.M. Arora, D. Kanjilal, G.K. Mehta

Application of the Combined Channeling Method at Higher Ion Energies on Cyclotron

Authors: F. Ditrói, J.D. Meyer, R.W. Michelmann, Klaus Bethge

361

Damage Production in Ion Implanted III-V Compounds: A Comparative Study

Authors: Elke Wendler

261

Pulsed Electron Beam Annealing of GaAs after High Dose Implantation of Hydrogen

Authors: T. Hauser, L. Bredell, H. Gaigher, H. Alberts, A. Botha, M. Hayes, E. Friedland

253

Effects of Source Composition on Diffusion and Solubility of Zinc in Gallium Arsenide

Authors: H.-G. Hettwer, Nicolaas Stolwijk, Helmut Mehrer

1117

Interdiffusion in GaAs/GaAsP and GaAs/GaAsSb Superlattices

Authors: M. Schultz, U. Egger, R. Scholz, Otwin Breitenstein, P. Werner, U.M. Gösele, R. Franzheld, M. Uematsu, H. Ito

1101

Self-Diffusion Studies using Semiconductor Isotope Heterostructures

Authors: Eugene E. Haller, Lei Wang

1067

Analyzing Method of Surface Structures by X-Ray Photoelectron Spectroscopy (XPS)

Authors: Ryouji Kosugi, S. Fujita, Y. Takakuwa, J. Tani, Nao Miyamoto, Yasuhiro Yamazaki

755

Hydrogen-Dopant Interactins in Crystalline Semiconductors

Authors: Jacques Chevallier